SOT89 PNP SILICON POWER FCX1147A (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION C * 20A Peak Pulse Current * Excellent H Characteristics up to 20 Amps FE * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance R 53m at 3A CE(sat) E C Complimentary Type - FCX1047A B Partmarking Detail - 147 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -15 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current ** I -20 A CM Continuous Collector Current I -3 A C Base Current I -500 mA B Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended P calculated using FR4 measuring 15x15x0.6mm tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components.FCX1147A ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb VALUE PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. Collector-Base V -15 V I =-100A (BR)CBO C Breakdown Voltage Collector-Emitter V -12 V I =-100A (BR)CES C Breakdown Voltage Collector-Emitter V -12 V I =-10mA (BR)CEO C Breakdown Voltage Collector-Emitter V -12 V I =-100A, V =+1V (BR)CEV C EB Breakdown Voltage Emitter-Base V -5 V I =-100A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I -0.3 -10 nA V =-12V CBO CB Emitter Cut-Off Current I -0.3 -10 nA V =-4V EBO EB Collector Emitter Cut-Off I -0.3 -10 nA V =-10V CES CES Current Collector-Emitter V -25 -50 mV I =-0.1A, I =-1mA* CE(sat) C B Saturation Voltage -70 -110 mV I =-0.5A, I =-2.5mA* C B -90 -130 mV I =-1A, I =-6mA* C B -115 -170 mV I =-2A, I =-20mA* C B -160 -250 mV I =-3A, I =-30mA* C B -250 -400 I =-5A, I =-50mA* C B Base-Emitter V -820 -1000 mV I =-3A, I =-30mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V -770 -950 mV I =-3A, V =-2V* BE(on) C CE Voltage Static Forward Current h 270 450 I =-10mA, V =-2V* FE C CE Transfer Ratio 250 400 850 I =-0.5A, V =-2V* C CE 200 340 I =-2.0A, V =-2V* C CE 200 300 I =-3.0A, V =-2V* C CE 150 245 I =-5.0A, V =-2V* C CE 90 145 I =-10.0A, V =-2V* C CE 50 I =-20.0A, V =-2V* C CE Transition Frequency f 115 MHz I =-50mA, V =-10V T C CE f=50MHz Output Capacitance C 80 pF V =-10V, f=1MHz cb CB Switching Times t 150 ns I =-4A, I =-40mA, on C B V =-10V CC t 220 ns I =-4A, I =- 40mA, off C B V =-10V CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%