SOT89 PNP SILICON POWER FCX1149A (SWITCHING) TRANSISTOR ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION C * 20A Peak Pulse Current * Excellent H Characteristics up to 10 Amps FE * Extremely Low Saturation Voltage E.g. 45mv Typ. * Extremely Low Equivalent On-resistance R 67m at 3A CE(sat) E C B Partmarking Detail - 149 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -30 V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current ** I -10 A CM Continuous Collector Current I -3 A C Base Current I -500 mA B Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended P calculated using FR4 measuring 15x15x0.6mm tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for these devices. Refer to the handling instructions for soldering surface mount components. FCX1149A ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb VALUE PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. Collector-Base V -30 V I =-100 A (BR)CBO C Breakdown Voltage Collector-Emitter V -25 V I =-100 A (BR)CES C Breakdown Voltage Collector-Emitter V -25 V I =-10mA* (BR)CEO C Breakdown Voltage Collector-Emitter V -25 V I =-100 A, V =+1V (BR)CEV C EB Breakdown Voltage Emitter-Base V -5 V I =-100 A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I -0.3 -100 nA V =-24V CBO CB Emitter Cut-Off Current I -0.3 -100 nA V =-4V EBO EB Collector Emitter Cut-Off I -0.3 -100 nA V =-20V CES CES Current Collector-Emitter V -45 -80 mV I =-0.1A, I =-1mA* CE(sat) C B Saturation Voltage -100 -170 mV I =-0.5A, I =-3mA* C B -140 -240 mV I =-1A, I =-7mA* C B -200 -300 mV I =-3A, I =-100mA* C B -230 -350 mV I =-4A, I =-140mA* C B Base-Emitter V -930 -1050 mV I =-3A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V -840 -1000 mV I =-3A, V =-2V* BE(on) C CE Voltage Static Forward Current h 270 450 I =-10mA, V =-2V* FE C CE Transfer Ratio 250 400 800 I =-0.5A, V =-2V* C CE 150 260 I =-3.0A, V =-2V* C CE 115 190 I =-5.0A, V =-2V* C CE 50 I =-10.0A, V =-2V* C CE Transition Frequency f 135 MHz I =-50mA, V =-10V T C CE f=50MHz Output Capacitance C 50 pF V =-10V, f=1MHz CB cb Switching Times t 150 ns I =-4A, I =-40mA, on C B V =-10V CC t 270 ns I =-4A, I = 40mA, off C B V =-10V CC *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%