SOT89 PNP SILICON POWER FCX1151A (SWITCHING) TRANSISTOR ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION C * 5A Peak Pulse Current * Excellent H Characteristics up to 5 Amps FE * Extremely Low Saturation Voltage E.g. 60mv Typ. * Extremely Low Equivalent On-resistance R 66m at 3A CE(sat) E C Complimentary Type - FCX1051A B Partmarking Detail - 151 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -45 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current ** I -5 A CM Continuous Collector Current I -3 A C Base Current I -500 mA B Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended P calculated using FR4 measuring 15x15x0.6mm tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components.FCX1151A ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -45 V I =-100A (BR)CBO C Breakdown Voltage Collector-Emitter V -40 V I =-100A (BR)CES C Breakdown Voltage Collector-Emitter V -40 V I =-10mA (BR)CEO C Breakdown Voltage Collector-Emitter V -40 V I =-100A, V =+1V (BR)CEV C EB Breakdown Voltage Emitter-Base V -5 V I =-100A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I -0.3 -100 nA V =-36V CBO CB Emitter Cut-Off Current I -0.3 -100 nA V =-4V EBO EB Collector Emitter Cut-Off I -0.3 -100 nA V =-32V CES CE Current Collector-Emitter V -60 -90 mV I =-0.1A, I =-1.0mA* CE(sat) C B Saturation Voltage -120 -180 mV I =-0.5A, I =-5mA* C B -140 -220 mV I =-1A, I =-20mA* C B -200 -300 mV I =-3A, I =-250mA* C B Base-Emitter V -985 -1050 mV I =-3A, I =-250mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V -850 -950 mV I =-3A, V =-2V* BE(on) C CE Voltage Static Forward Current h 270 450 I =-10mA, V =-2V* FE C CE Transfer Ratio 250 400 800 I =-0.5A, V =-2V* C CE 180 300 I =-2A, V =-2V* C CE 100 190 I =-3A, V =-2V* C CE 45 I =-5A, V =-2V* C CE Transition Frequency f 145 MHz I =-50mA, V =-10V T C CE f=50MHz Output Capacitance C 40 pF V =-10V, f=1MHz cb CB Switching Times t 170 ns I =-2A, I =-20mA, on C B V =-30V CC t 460 ns I =-2A, I =20mA, off C B V =-30V CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%