FCX495Q 150V NPN MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT89 stringent requirement of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads Solderable per Features MIL-STD-202, Method 208 BV > 150V Weight: 0.052 grams (Approximate) CEO I = 1A High Continuous Current C Low Saturation Voltage V < 300mV 0.5A CE(sat) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Application Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Low Loss Power Switching PPAP Capable (Note 4) C SOT89 E B C C B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 and 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel FCX495QTA N95 7 12 1,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See FCX495Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 170 V CBO Collector-Emitter Voltage V 150 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 1 A C Peak Pulse Current I 2 A CM Continuous Base Current 200 mA IB Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector Power Dissipation P 1 W D Thermal Resistance, Junction to Ambient Air (Note 6) R 125 C/W JA Thermal Resistance, Junction to Leads (Note 7) R 10.01 C/W JL Operating and Storage Temperature Range T T -65 to +150 C J, STG Notes: 6. For the device mounted on 15mm x 15mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information V CE(sat) 1.0 1 Limited 0.8 DC 0.6 1s 100m 100ms 0.4 10ms 1ms 10m 0.2 o Single Pulse. T =25 C A 100s 0.0 100m 1 10 100 0 25 50 75 100 125 150 o V Collector-Emitter Voltage (V) CE Temperature ( C) Safe Operating Area Derating Curve 100 120 o Single Pulse. T =25 C A 100 80 D=0.5 10 60 40 Single Pulse D=0.2 D=0.05 20 D=0.1 1 0 100 100 1m 10m 100m 1 10 100 1k 100100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 FCX495Q June 2018 Diodes Incorporated www.diodes.com Document number: DS41103 Rev. 1 - 2 o I Collector Current (A) Thermal Resistance ( C/W) C Max Power Dissipation (W) Max Power Dissipation (W)