SOT89 PNP SILICON PLANAR MEDIUM FCX589 POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL P89 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Base Current I -200 mA B Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature Range T :T -65 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V -50 V I =-100A (BR)CBO C V -30 V I =-10mA* (BR)CEO C V -5 V I =-100A (BR)EBO E Collector Cut-Off Current I -100 nA V =-30V CBO CB Collector -Emitter Cut-Off I -100 nA V =-30V CES CES Current Emitter Cut-Off Current I -100 nA V =-4V EBO EB Collector-Emitter V -0.35VI =-1A, I =-100mA* CE(sat) C B Saturation Voltage -0.65 I =-2A, I =-200mA* C B Base-Emitter V -1.2 V I =-1A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter V -1.1 V I =-1A, V =-2V* BE(on) C CE Turn-on Voltage Static Forward Current Transfer h 100 I =-1mA, V =-2V* FE C CE Ratio 100 300 I =-500mA, V =-2V* C CE 80 I =-1A, V =-2V* C CE 40 I =-2A, V =-2V* C CE Transition Frequency f 100 MHz I =-100mA, V =-5V T C CE f=100MHz Output Capacitance C 15 pF V =-10V, f=1MHz obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical Characteristics graphs see FMMT549 datasheet 3 - 91