FCX591AQ 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT89 stringent requirements of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per Features MIL-STD-202, Method 208 BV > -40V CEO Weight: 0.05 grams (Approximate) Maximum Continuous Current I = -1A C Low Saturation Voltage V < -500mV -1A CE(SAT) Complementary NPN type: FCX491AQ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Application Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Power MOSFET & IGBT Gate Driving PPAP Capable (Note 4) Low Loss Power Switching SOT89 C E B C C B E Top View Top View Device Symbol Pin Out Ordering Information (Note 5) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FCX591AQTA P2 7 12 1,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See FCX591AQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -1 A C Peak Pulse Current I -2 A CM Peak Base Current I -200 mA B Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) P 1 W D Thermal Resistance, Junction to Ambient Air (Note 6) R 125 C/W JA Thermal Resistance, Junction to Leads (Note 7) 10.01 C/W R JL Operating and Storage Temperature Range -65 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 15mm X 15mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions device measured when operating in steady state condition. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 August 2016 FCX591AQ www.diodes.com Diodes Incorporated Datasheet Number: DS38749 Rev. 2 - 2