SOT89 NPN SILICON POWER FCX617 (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION C * 12A Peak Pulse Current * Excellent H Characteristics up to 12 Amps FE * Extremely Low Saturation Voltage E.g. 8mv Typ. * Extremely Low Equivalent On-resistance R 50m at 3A CE(sat) E C B Partmarking Detail - 617 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 15 V CBO Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current ** I 12 A CM Continuous Collector Current I 3A C Base Current I 500 mA B Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended P calculated using FR4 measuring 15x15x0.6mm tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components.FCX617 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 15 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 15 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 5V I =100A (BR)EBO E Breakdown Voltage Collector Cut-Off I 0.3 100 nA V =10V CBO CB Current Emitter Cut-Off I 0.3 100 nA V =4V EBO EB Current Collector Emitter I 0.3 100 nA V =10V CES CES Cut-Off Current Collector-Emitter V 8 14 mV I =0.1A, I =10mA* CE(sat) C B Saturation Voltage 70 100 mV I =1A, I =10mA* C B 150 230 mV I =3A, I =50mA* C B 300 mV I =4A, I =50mA* C B 400 mV I =5A, I =50mA* C B Base-Emitter V 0.89 1.0 V I =3A, I =50mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V 0.82 1.0 V I =3A, V =2V* C BE(on) CE Voltage Static Forward h 200 415 I =10mA, V =2V* FE C CE Current Transfer 300 450 I =200mA, V =2V* C CE Ratio 200 320 I =3A, V =2V* C CE 150 240 I =5A, V =2V* C CE 80 I =12A, V =2V* C CE Transition f 80 120 MHz I =50mA, V =10V T C CE Frequency f=50MHz Output Capacitance C 30 40 pF V =10V, f=1MHz obo CB Turn-On Time t 120 ns V =10V, I =3A (on) CC C I =I =50mA B1 B2 Turn-Off Time t 160 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%