SOT89 NPN SILICON POWER FCX688B (SWITCHING) TRANSISTOR ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION C * 10A Peak Pulse Current * Excellent H Characteristics up to 10 Amps FE * Extremely Low Saturation Voltage E Complimentary Type - FCX789A C Partmarking Detail - 688 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 12 V CBO Collector-Emitter Voltage V 12 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current ** I 10 A CM Continuous Collector Current I 3A C Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components.FCX688B ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS. Collector-Base V 12 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 12 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V5V I =100A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I 0.1 A V =9V CBO CB Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter V 40 mV I =0.1A, I =1mA * CE(sat) C B Saturation Voltage 60 mV I =0.1A, I =0.5mA * C B mV 180 I =1A, I =10mA * C B 350 mV I =3A, I =10mA * C B 400 mV I =4A, I =50mA * C B I =3A, I =20mA * Base-Emitter V 1.1 V C B BE(sat) Saturation Voltage Base-Emitter V 1.0 V IC=3A, V =2V * BE(on) CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =2V* FE C CE Transfer 400 I =3A, V =2V* C CE Ratio 100 I =10A, V =2V* C CE Transition Frequency f 150 MHz I =50mA, V =5V T C CE f=50MHz Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB Output Capacitance C 40 pF V =10V, f=1MHz obo CB Switching Times t 40 ns I =500mA, I =I =50mA on C B1 B2 t 500 ns V =10V off CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%