SOT89 PNP SILICON POWER FCX717 (SWITCHING) TRANSISTOR ISSSUE 1 - MAY 1999 FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent H Characteristics up to 10 Amps FE * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance R 77m at 3A CE(sat) Partmarking Detail - 717 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -12 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current ** I -10 A CM Continuous Collector Current I -3 A C Base Current I -500 mA B Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended Ptot calculated using FR4 measuring 15x15x0.6mm Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components.FCX717 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -12 -35 V I =-100A (BR)CBO C Breakdown Voltage Collector-Emitter V -12 -25 V I =-10mA* (BR)CEO C Breakdown Voltage Emitter-Base V -5 -8.5 V I =-100A (BR)EBO E Breakdown Voltage Collector Cut-Off I -100 nA V =-10V CBO CB Current Emitter Cut-Off Current I -100 nA V =-4V EBO EB Collector Emitter I -100 nA V =-10V CES CES Cut-Off Current Collector-Emitter V -12 -20 mV I =-0.1A, I =-10mA* CE(sat) C B Saturation Voltage -110 -150 mV I =-1A, I =-10mA* C B -230 -320 mV I =-3A, I =-50mA* C B Base-Emitter V -0.92 -1.05 V I =-3A, I =-50mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V -0.85 -1.0 V I =-3A, V =-2V* BE(on) C CE Voltage Static Forward Current h 300 475 I =-10mA, V =-2V* FE C CE Transfer 300 450 I =-0.1A, V =-2V* C CE Ratio 160 240 I =-3A, V =-2V* C CE 60 100 I =-8A, V =-2V* C CE 45 70 I =-10A, V =-2V* C CE Transition f 80 110 MHz I =-50mA, V =-10V T C CE Frequency f=100MHz Output Capacitance C 21 30 pF V =-10V, f=1MHz obo CB Turn-On Time t 70 ns V =-6V, I =-2A (on) CC C I =I =50mA B1 B2 Turn-Off Time t 130 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%