SOT89 PNP SILICON POWER FCX718 (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION C * 6A Peak Pulse Current * Excellent H Characteristics up to 6Amps FE * Extremely Low Saturation Voltage E.g. 16mv Typ. * Extremely Low Equivalent On-resistance R 96m at 2.5A CE(sat) E C B Partmarking Detail - 718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current ** I -6 A CM Continuous Collector Current I -2.5 A C Base Current I -500 mA B Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended P calculated using FR4 measuring 15x15x0.6mm tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components.FCX718 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -20 -65 V I =-100A (BR)CBO C Breakdown Voltage Collector-Emitter V -20 -55 V I =-10mA* (BR)CEO C Breakdown Voltage Emitter-Base V -5 -8.8 V I =-100A (BR)EBO E Breakdown Voltage Collector Cut-Off I -100 nA V =-15V CBO CB Current Emitter Cut-Off Current I -100 nA V =-4V EBO EB Collector Emitter I -100 nA VCES=-15V CES Cut-Off Current Collector-Emitter V -16 -40 mV I =-0.1A, I =-10mA* CE(sat) C B Saturation Voltage -130 -200 mV I =-1A, I =-20mA* C B -145 -220 mV I =-1.5A, I =-50mA* C B -300 mV I =-2.5A, I =-200mA* C B Base-Emitter V -0.98 -1.1 V I =-2.5A, I =-200mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V -0.85 -0.95 V I =-2.5A, V =-2V* C BE(on) CE Voltage Static Forward Current h 300 475 I =-10mA, V =-2V* FE C CE Transfer 300 450 I =-0.1A, V =-2V* C CE Ratio 150 230 I =-2A, V =-2V* C CE 35 70 I =-4A, V =-2V* C CE 15 30 I =-6A, V =-2V* C CE Transition f 150 180 MHz I =-50mA, V =-10V T C CE Frequency f=100MHz Output Capacitance C 21 30 pF V =-10V, f=1MHz obo CB Turn-On Time t 40 ns V =-15V, I =-0.75A (on) CC C I =I =15mA B1 B2 Turn-Off Time t 670 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%