SOT89 PNP SILICON POWER FCX790A (SWITCHING) TRANSISTOR ISSUE 3 - OCTOBER 2005 FEATURES * 2W POWER DISSIPATION C * 6A Peak Pulse Current *Excellent H Characteristics FE * Low Saturation Voltages E Partmarking Detail - 790 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current ** I -6 A CM Continuous Collector Current I -2 A C Power Dissipation at T =25C P 1 W amb tot 2 W Operating and Storage Temperature Range T :T -55 to +150 C j stg recommended P calculated using FR4 measuring 15x15x0.6mm tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Spice parameter data is available upon request for these devices Refer to the handling instructions when soldering surface mount components.FCX790A ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -50 V I =-100 A (BR)CBO C Voltage Collector-Emitter Breakdown V -40 V I =-10mA* (BR)CEO C Voltage Emitter-Base Breakdown V -5 V I =-100 A (BR)EBO E Voltage Collector Cut-Off Current I -0.1 A V =-30V CBO CB Emitter Cut-Off Current I -0.1 A V =-4V EBO EB Collector-Emitter Saturation V -250 mV I =-0.5A, I =-5mA* CE(sat) C B Voltage -350 mV I =-1A, I =-10mA* C B -450 mV I =-2A, I =-50mA* C B Base-Emitter V -0.9 V I =-1A, I =-10mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.8 V I =-1A, V =-2V* BE(on) C CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V FE C CE Transfer Ratio 250 I =-500mA, V =-2V* C CE 200 I =-1A, V =-2V* C CE 150 I =-2A, V =-2V* C CE Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB Output Capacitance C 24 pF V =-10V, f=1MHz obo CB Switching Times t 35 ns I =-500mA, I =-50mA on C B1 t 600 ns I =-50mA, V =-10V off B2 CC *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%