FMMT38CTA Diodes Incorporated

BE(sat) V - (Volts) CE(sat) V - (Volts) FE h - Normalised Gain FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38A SOT23 NPN SILICON PLANAR MEDIUM FMMT38B FMMT38B POWER DARLINGTON TRANSISTORS FMMT38C FMMT38C ISSUE 3 AUGUST 1996 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * Gain of 10K at I =0.5 Amp C E C IC/IB=100 VCE=5V PARTMARKING DETAILS FMMT38A 4J 1.0 1.6 +100C 1.4 FMMT38B 5J B -55C 0.8 1.2 FMMT38C 7J 1.0 +25C +25C ABSOLUTE MAXIMUM RATINGS. 0.8 0.6 +100C PARAMETER SYMBOL VALUE UNIT 0.6 0.4 0.4 +175C -55C Collector-Base Voltage V 80 V CBO 0.2 Collector-Emitter Voltage V 60 V CEO 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Emitter-Base Voltage V 10 V EBO C Collector Current (Amps) I - IC - Collector Current (Amps) Peak Pulse Current I 800 mA CM CE(sat) C V v I hFE v IC Continuous Collector Current I 300 mA C Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg VCE=5V IC/IB=100 2.0 ELECTRICAL CHARACTERISTICS (at T = 25C). amb 2.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. -55C -55C 1.5 1.5 Collector-Base V 80 V I =10 A, I =0 (BR)CBO C E +25C Breakdown Voltage +25C +100C 1.0 Collector-Emitter V 60 V I =10mA, I =0 1.0 CEO(sus) C B +100C Sustaining Voltage +175C 0.5 +175C Emitter-Base V 10 V I =10 A, I =0 (BR)EBO E C 0.5 Breakdown Voltage 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) C I - Collector Current (Amps) Collector Cut-Off I 100 nA V =60V, I =0 CBO CB E BE(sat) C Current V v I VBE(on) v IC 1 Emitter Cut-Off Current I 100 nA V =8V, I =0 EBO EB C D=1 (D.C.) Collector-Emitter V 1.25 V I =800mA, I =8mA* CE(sat) C B 150 Saturation Voltage 100m Base-Emitter V 1.8 V I =800mA, V =5V* BE(on) C CE 100 DC Turn-on Voltage D=0.5 1s 100ms Static FMMT38A h 500 I =100mA, V =5V* 10ms FE C CE 10m 1ms Forward 1000 I =500mA, V =5V* C CE 100us 50 Current D=0.2 FMMT38B 2000 I =100mA, V =5V* Transfer C CE D=0.1 4000 I =500mA, V =5V* D=0.05 Ratio C CE 1m Single Pulse 0 100m 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 FMMT38C 5000 I =100mA, V =5V* C CE 10000 I Pulse Width (seconds) =500mA, V =5V* C CE VCE - Collector Emitter Voltage (V) *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Maximum transient thermal impedance Safe Operating Area Spice parameter data is available upon request for this device 3 - 101 3 - 100 E B V ) V - ( olts Thermal Resistance (C/W) IC - Collector Current (A)BE(sat) V - (Volts) CE(sat) V - (Volts) FE h - Normalised Gain FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38A SOT23 NPN SILICON PLANAR MEDIUM FMMT38B FMMT38B POWER DARLINGTON TRANSISTORS FMMT38C FMMT38C ISSUE 3 AUGUST 1996 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * Gain of 10K at I =0.5 Amp C E C IC/IB=100 VCE=5V PARTMARKING DETAILS FMMT38A 4J 1.0 1.6 +100C 1.4 FMMT38B 5J B -55C 0.8 1.2 FMMT38C 7J 1.0 +25C +25C ABSOLUTE MAXIMUM RATINGS. 0.8 0.6 +100C PARAMETER SYMBOL VALUE UNIT 0.6 0.4 0.4 +175C -55C Collector-Base Voltage V 80 V CBO 0.2 Collector-Emitter Voltage V 60 V CEO 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Emitter-Base Voltage V 10 V EBO C Collector Current (Amps) I - IC - Collector Current (Amps) Peak Pulse Current I 800 mA CM CE(sat) C V v I hFE v IC Continuous Collector Current I 300 mA C Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg VCE=5V IC/IB=100 2.0 ELECTRICAL CHARACTERISTICS (at T = 25C). amb 2.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. -55C -55C 1.5 1.5 Collector-Base V 80 V I =10 A, I =0 (BR)CBO C E +25C Breakdown Voltage +25C +100C 1.0 Collector-Emitter V 60 V I =10mA, I =0 1.0 CEO(sus) C B +100C Sustaining Voltage +175C 0.5 +175C Emitter-Base V 10 V I =10 A, I =0 (BR)EBO E C 0.5 Breakdown Voltage 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) C I - Collector Current (Amps) Collector Cut-Off I 100 nA V =60V, I =0 CBO CB E BE(sat) C Current V v I VBE(on) v IC 1 Emitter Cut-Off Current I 100 nA V =8V, I =0 EBO EB C D=1 (D.C.) Collector-Emitter V 1.25 V I =800mA, I =8mA* CE(sat) C B 150 Saturation Voltage 100m Base-Emitter V 1.8 V I =800mA, V =5V* BE(on) C CE 100 DC Turn-on Voltage D=0.5 1s 100ms Static FMMT38A h 500 I =100mA, V =5V* 10ms FE C CE 10m 1ms Forward 1000 I =500mA, V =5V* C CE 100us 50 Current D=0.2 FMMT38B 2000 I =100mA, V =5V* Transfer C CE D=0.1 4000 I =500mA, V =5V* D=0.05 Ratio C CE 1m Single Pulse 0 100m 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 FMMT38C 5000 I =100mA, V =5V* C CE 10000 I Pulse Width (seconds) =500mA, V =5V* C CE VCE - Collector Emitter Voltage (V) *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% Maximum transient thermal impedance Safe Operating Area Spice parameter data is available upon request for this device 3 - 101 3 - 100 E B V ) V - ( olts Thermal Resistance (C/W) IC - Collector Current (A)