X-On Electronics has gained recognition as a prominent supplier of FMMT417TD Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT417TD Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT417TD Diodes Incorporated

FMMT417TD electronic component of Diodes Incorporated
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See Product Specifications
Part No.FMMT417TD
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Avalanche
Datasheet: FMMT417TD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.547 ea
Line Total: USD 8.55 
Availability - 5192
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5192
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 8.547
10 : USD 7.029
100 : USD 6.204
500 : USD 6.182
1000 : USD 6.171
5000 : USD 6.16

15035
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 500
Multiples : 500
500 : USD 7.3125

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMMT417TD from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT417TD and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case: SOT23 60A Peak Avalanche Current (Pulse width = 20ns) Case Material: Molded Plastic. Green Molding Compound. BV > 260V (415) & 320V (417) CES UL Flammability Classification Rating 94V-0 BV > 100V CEO Moisture Sensitivity: Level 1 per J-STD-020 Specifically designed for Avalanche mode operation Terminals: Finish Matte Tin Plated Leads. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 e3 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.008 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability Description Applications The FMMT415/417 are NPN silicon planar bipolar transistors Laser Diode Drivers for Ranging and Measurement (LIDAR) designed for operating in avalanche mode. Tight process control and Radar Systems low inductance packaging combine to produce high-current pulses Fast Edge Switch Generator with fast edges. High Speed Pulse Generators SOT23 C E C B B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT415TD AEC-Q101 415 7 8 500 FMMT417TD AEC-Q101 417 7 8 500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See FMMT415 FMMT417 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol FMMT415 FMMT417 Unit Collector-Base Voltage 260 320 V V CBO Collector-Emitter Voltage V 260 320 V CES Collector-Emitter Voltage V 100 100 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 500 mA C Peak Collector Current (Pulse Width = 20ns) I 60 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 500 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 250 C/W JA Thermal Resistance, Junction to Lead (Note 6) R 197 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FMMT415 - FMMT417 November 2015 www.diodes.com Diodes Incorporated Datasheet Number: DS33084 Rev. 6 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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