V - (Volts) h - Normalised Gain (%) V - (Volts) V - (Volts) Switching time SOT23 NPN SILICON PLANAR FMMT455 FMMT455 HIGH PERFORMANCE TRANSISTOR ISSUE 3 FEBRUARY 1996 FEATURES TYPICAL CHARACTERISTICS * 140 Volt V CEO tf E ns ts * 1 Amp continuous current 900 S C tr 7 tf *P = 500 mW 0.4 ns tot 500 800 6 ts IB1=IB2=IC/10 B 400 700 VCE =10V 5 0.3 PARTMARKING DETAIL 455 C B I /I =10 tr 4 300 60 0 td 0.2 3 nS 200 500 10 0 2 SOT23 0.1 100 40 0 50 1 ABSOLUTE MAXIMUM RATINGS. td 0 30 0 0 0 0 PARAMETER SYMBOL VALUE UNIT 0. 01 0. 1 1 0.001 0.01 0.1 1 Collector-Base Voltage V 160 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 140 V CEO Emitter-Base Voltage V 5V VCE(sat) v IC Typical Switching Speeds EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 100 Base Current I 200 mA B 1.0 IC/IB =10 Power Dissipation at T =25C P 500 mW 80 amb tot VCE=10V 0.8 Operating and Storage Temperature Range T :T -55 to +150 C j stg 60 0.6 ELECTRICAL CHARACTERISTICS (at T = 25C). amb 40 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 0.4 20 Collector-Base V 160 V I =100A (BR)CBO C 0.2 Breakdown Voltage 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Collector-Emitter V 140 V I =10mA* CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage hFE v IC VBE(sat) v IC Emitter-Base V 5V I =100A (BR)EBO E Breakdown Voltage Si ngle Pul se Test at Tamb=2 5C 10 Collector Cut-Off Current I 0.1 A V =140V CBO CB 1.2 VCE =1 0V 1 Emitter Cut-Off Current I 0.1 A V =4V EBO EB 1.0 Collector-Emitter V 0.7 V I =150mA, I =15mA CE(sat) C B 0.1 DC 0.8 Saturation Voltage 1s 100ms 10ms 1ms Static Forward Current h 100 300 I =150mA, V =10V* FE C CE 0.6 0.01 100s Transfer Ratio 10 Typ I =1A, V =10V* C CE 0.4 Transition f 100 MHz I =50mA, V =10V 0.001 T C CE 0.0001 0.001 0.01 0.1 1 0.1 110 100 1000 Frequency f=100MHz IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance C 15 pF V =10V, f=1MHz obo CB VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 111 3 - 110 V - (Volts) h - Normalised Gain (%) V - (Volts) V - (Volts) Switching time SOT23 NPN SILICON PLANAR FMMT455 FMMT455 HIGH PERFORMANCE TRANSISTOR ISSUE 3 FEBRUARY 1996 FEATURES TYPICAL CHARACTERISTICS * 140 Volt V CEO tf E ns ts * 1 Amp continuous current 900 S C tr 7 tf *P = 500 mW 0.4 ns tot 500 800 6 ts IB1=IB2=IC/10 B 400 700 VCE =10V 5 0.3 PARTMARKING DETAIL 455 C B I /I =10 tr 4 300 60 0 td 0.2 3 nS 200 500 10 0 2 SOT23 0.1 100 40 0 50 1 ABSOLUTE MAXIMUM RATINGS. td 0 30 0 0 0 0 PARAMETER SYMBOL VALUE UNIT 0. 01 0. 1 1 0.001 0.01 0.1 1 Collector-Base Voltage V 160 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 140 V CEO Emitter-Base Voltage V 5V VCE(sat) v IC Typical Switching Speeds EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1A C 100 Base Current I 200 mA B 1.0 IC/IB =10 Power Dissipation at T =25C P 500 mW 80 amb tot VCE=10V 0.8 Operating and Storage Temperature Range T :T -55 to +150 C j stg 60 0.6 ELECTRICAL CHARACTERISTICS (at T = 25C). amb 40 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 0.4 20 Collector-Base V 160 V I =100A (BR)CBO C 0.2 Breakdown Voltage 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 Collector-Emitter V 140 V I =10mA* CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage hFE v IC VBE(sat) v IC Emitter-Base V 5V I =100A (BR)EBO E Breakdown Voltage Si ngle Pul se Test at Tamb=2 5C 10 Collector Cut-Off Current I 0.1 A V =140V CBO CB 1.2 VCE =1 0V 1 Emitter Cut-Off Current I 0.1 A V =4V EBO EB 1.0 Collector-Emitter V 0.7 V I =150mA, I =15mA CE(sat) C B 0.1 DC 0.8 Saturation Voltage 1s 100ms 10ms 1ms Static Forward Current h 100 300 I =150mA, V =10V* FE C CE 0.6 0.01 100s Transfer Ratio 10 Typ I =1A, V =10V* C CE 0.4 Transition f 100 MHz I =50mA, V =10V 0.001 T C CE 0.0001 0.001 0.01 0.1 1 0.1 110 100 1000 Frequency f=100MHz IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) Output Capacitance C 15 pF V =10V, f=1MHz obo CB VBE(on) v IC Safe Operating Area * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 111 3 - 110