SOT23 NPN SILICON PLANAR FMMT491 FMMT491 MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance R 210m at 1A CE(sat) TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 C IC/I B=10 0.5 0.5 B COMPLEMENTARY TYPE - FMMT591 PARTMARKING DETAIL - 491 0.4 0.4 0.3 0.3 SOT23 -55 C C B I /I =10 ABSOLUTE MAXIMUM RATINGS. +25 C IC/I B=50 +100 C 0.2 0.2 PARAMETER SYMBOL VALUE UNIT 0.1 0.1 Collector-Base Voltage V 80 V CBO 0 0 Collector-Emitter Voltage V 60 V CEO 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Emitter-Base Voltage V 5V IC-Collector Current IC-Collector Current EBO VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I 1A C Peak Pulse Current I 2A CM 400 Power Dissipation at T =25C P 500 mW V CE=5V amb tot I C/I B=10 1.0 Operating and Storage Temperature Range T :T -55 to +150 C j stg +100 C 300 0.8 ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. +25 C 0.6 200 -55 C Collector-Base V 80 V I =100A +25 C (BR)CBO C 0.4 +100 C Breakdown Voltage -55 C 100 Collector-Emitter V 60 V I =10mA* 0.2 CEO(sus) C Breakdown Voltage 0 0 Emitter-Base V 5V I =100A 1mA 10mA 100mA 1A 10A (BR)EBO 1mA 10mA 100mA 1A 10A E Breakdown Voltage IC-Collector Current IC-Collector Current Collector Cut-Off Current I 100 nA V =60V CBO CB hFE V IC VBE(sat) v IC Collector Cut-Off Current I 100 nA V =60V CES CES Emitter Cut-Off Current I 100 nA V =4V EBO EB 1.2 10 VCE=5V Collector-Emitter V 0.25 V I =500mA, I =50mA* CE(sat) C B 1.0 Saturation Voltage 0.50 V I =1A, I =100mA* C B Base-Emitter V 1.1 V I =1A, I =100mA* 0.8 1 BE(sat) C B Saturation Voltage 0.6 DC Base-Emitter V 1.0 V I =1A, V =5V* C BE(on) CE 1s -55 C 100ms Turn On Voltage 0.4 +25 C 0.1 10ms +100 C 1ms 100us Static Forward Current h 100 I =1mA, V =5V FE C CE 0.2 Transfer Ratio 100 300 I =500mA, V =5V* C CE 80 I =1A, V =5V* 0 0.01 C CE 30 I =2A, V =5V* 1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V C CE Transition Frequency f 150 MHz I =50mA, V =10V IC-Collector Current VCE - Collector Emitter Voltage (V) T C CE f=100MHz VBE(on) v IC Safe Operating Area Collector-Base C 10 pF V =10V, f=1MHz obo CB Breakdown Voltage *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 116 3 - 115 SOT23 NPN SILICON PLANAR FMMT491 FMMT491 MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance R 210m at 1A CE(sat) TYPICAL CHARACTERISTICS E C 0.6 0.6 +25 C IC/I B=10 0.5 0.5 B COMPLEMENTARY TYPE - FMMT591 PARTMARKING DETAIL - 491 0.4 0.4 0.3 0.3 SOT23 -55 C C B I /I =10 ABSOLUTE MAXIMUM RATINGS. +25 C IC/I B=50 +100 C 0.2 0.2 PARAMETER SYMBOL VALUE UNIT 0.1 0.1 Collector-Base Voltage V 80 V CBO 0 0 Collector-Emitter Voltage V 60 V CEO 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Emitter-Base Voltage V 5V IC-Collector Current IC-Collector Current EBO VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I 1A C Peak Pulse Current I 2A CM 400 Power Dissipation at T =25C P 500 mW V CE=5V amb tot I C/I B=10 1.0 Operating and Storage Temperature Range T :T -55 to +150 C j stg +100 C 300 0.8 ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. +25 C 0.6 200 -55 C Collector-Base V 80 V I =100A +25 C (BR)CBO C 0.4 +100 C Breakdown Voltage -55 C 100 Collector-Emitter V 60 V I =10mA* 0.2 CEO(sus) C Breakdown Voltage 0 0 Emitter-Base V 5V I =100A 1mA 10mA 100mA 1A 10A (BR)EBO 1mA 10mA 100mA 1A 10A E Breakdown Voltage IC-Collector Current IC-Collector Current Collector Cut-Off Current I 100 nA V =60V CBO CB hFE V IC VBE(sat) v IC Collector Cut-Off Current I 100 nA V =60V CES CES Emitter Cut-Off Current I 100 nA V =4V EBO EB 1.2 10 VCE=5V Collector-Emitter V 0.25 V I =500mA, I =50mA* CE(sat) C B 1.0 Saturation Voltage 0.50 V I =1A, I =100mA* C B Base-Emitter V 1.1 V I =1A, I =100mA* 0.8 1 BE(sat) C B Saturation Voltage 0.6 DC Base-Emitter V 1.0 V I =1A, V =5V* C BE(on) CE 1s -55 C 100ms Turn On Voltage 0.4 +25 C 0.1 10ms +100 C 1ms 100us Static Forward Current h 100 I =1mA, V =5V FE C CE 0.2 Transfer Ratio 100 300 I =500mA, V =5V* C CE 80 I =1A, V =5V* 0 0.01 C CE 30 I =2A, V =5V* 1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V C CE Transition Frequency f 150 MHz I =50mA, V =10V IC-Collector Current VCE - Collector Emitter Voltage (V) T C CE f=100MHz VBE(on) v IC Safe Operating Area Collector-Base C 10 pF V =10V, f=1MHz obo CB Breakdown Voltage *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 116 3 - 115