FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: V = 60V, I = 1A, VCE = 0.5V 1A CEO C (SAT) E C Description: This 60V NPN transistor provides users with B performance combining low saturation and high h FE with a continuous current capability of 1A, ensuring SOT23 improved circuit efficiencies. Features Low saturation voltage High h min 300 250mA FE I = 1A C Applications Various driving functions including:- - Motors - Actuators - Soleniod & Relays Backlight Inverters. DC DC Modules. E Device Reel Size Tape Width Quantity C (inches) (mm) Per Reel FMMT493ATA 7 8mm embossed 3000 units B FMMT493ATC 13 8mm embossed 10000 units TOP VIEW ISSUE 2 - AUGUST 2003 1 SEMICONDUCTORSFMMT493A ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector - Base V 120 V I = 100 A (BR)CBO C Breakdown Voltage Collector - Emitter V 60 V I = 10mA* CEO(SUS) C Breakdown Voltage Emitter - Base V 5VI = 100 A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I 100 nA V = 45V CBO CB Collector Cut-Off Current I 100 nA V = 45V CES CES Emitter Cut-Off Current I 100 nA V =4V EBO EB Collector - Emitter V 0.25 V I = 500mA, I = 50mA CE(SAT) C B Saturation Voltage 0.5 V I = 1A, I = 100mA C B Base - Emitter Saturation V 1.15 V I =1A, I = 100mA BE(SAT) C B Voltage Base Emitter Turn On V 1.0 V I = 1A, V - 10V BE(ON) C CE Voltage Static Forward Current h 300 I =1mA,V = 10V FE C CE Transfer Ratio 500 I = 150mA, V = 10V C CE 300 1200 I = 250mA, V = 10V C CE 100 I = 500mA, V = 10V C CE 20 I = 1A, V = 10V C CE Transition Frequency f 150 Mhz I = 50mA, V = 10V T C CE f = 100MHz Output Capacitance C 10 pF V = 10V, f = 1MHz OBO CB *Measured under pulsed conditions. Pulse width = 300 s. Duty Cycle <2% ISSUE 2 - AUGUST 2003 2 SEMICONDUCTORS