X-On Electronics has gained recognition as a prominent supplier of FMMT494QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT494QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT494QTA Diodes Incorporated

FMMT494QTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.FMMT494QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SSMidPerfTranstr
Datasheet: FMMT494QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.539 ea
Line Total: USD 0.54 
Availability - 7383
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
305
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2808
50 : USD 0.2514
150 : USD 0.2387
500 : USD 0.2229
3000 : USD 0.216
6000 : USD 0.2117

7383
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.539
10 : USD 0.3608
100 : USD 0.1914
1000 : USD 0.1705
3000 : USD 0.1397

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMMT494QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT494QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FMMT494Q 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data Case: SOT23 (Type DN) This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound. stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Plated Leads, Solderable per Feature MIL-STD-202, Method 208 BV > 120V CEO Weight: 0.008 grams (Approximate) I = 1A Continuous Collector Current C I = 2A Peak Pulse Current CM 500mW Power Dissipation h characterised up to 1A for high current gain hold up FE Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4) SOT23 (Type DN) C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FMMT494QTA Automotive 494 7 8 3,000 FMMT494QTC Automotive 494 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See FMMT494Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 140 V CBO Collector-Emitter Voltage V 120 V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 1 A I C Peak Pulse Current 2 A I CM Base Current 200 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 500 mW D Thermal Resistance, Junction to Ambient (Note 6) R 250 C/W JA Thermal Resistance, Junction to Lead (Note 7) R 197 C/W JL Operating and Storage Temperature Range -55 to +150 C TJ, TSTG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FMMT494Q November 2017 Diodes Incorporated www.diodes.com Document number: DS40350 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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