FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage V 300 V CBO Collector-emitter voltage V 300 V CEO Emitter-base voltage V 5V EBO Continuous collector current I 500 mA C Peak pulse current I 1A CM Base current I 200 mA B Power dissipation at T =25C P 500 mW amb tot Operating and storage temperature range T :T -55 to +150 C j stg Issue 4 - November 2006 1 www.zetex.com Zetex Semiconductors plc 2006FMMT497 Electrical characteristics (at T = 25C unless otherwise stated) amb Parameter Symbol Min. Typ. Max Unit Conditions . Collector-base V 300 V I = 100 A (BR)CBO C breakdown voltage (*) Collector-emitter V 300 V I = 10mA CEO(sus) C breakdown voltage Emitter-base V 5VI = 100 A (BR)EBO E breakdown voltage Collector cut-off current I 100 nA V = 250V CBO CB Collector cut-off current I 100 nA V = 250V CES CES Emitter cut-off current I 100 nA V = 4V EBO EB Collector-emitter V 0.2 V I = 100mA, I = 10mA CE(sat) C B saturation voltage 0.3 V I = 250mA, I = 25mA C B Base-emitter V 1.0 V I = 250mA, I = 25mA BE(sat) C B saturation voltage Base-emitter V 1.0 V I = 250mA, V = 10V BE(on) C CE turn on voltage Static forward current h 100 I = 1mA, V = 10V FE C CE transfer ratio 80 300 (*) I = 100mA, V = 10V C CE 20 (*) I = 250mA, V = 10V C CE Transition frequency f 75 MHz I = 50mA, V = 10V T C CE f = 100MHz output capacitance C 5pF V = 10V, f = 1MHz obo CB Switching performance td 53 ns V = 100V, I = 100mA, CC C Ib1 = -Ib2 = 10mA tr 126 ns ts 2.58 s tf 228 ns NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. Issue 4 - November 2006 2 www.zetex.com Zetex Semiconductors plc 2006