A Product Line of Diodes Incorporated FMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data Case: SOT23 BV > -30V CEO Maximum Continuous Collector Current I = -1A UL Flammability Rating 94V-0 C 500mW power dissipation Case material: molded Plastic. Complementary type: Moisture Sensitivity: Level 1 per J-STD-020 o FMMT549 FMMT449 Terminals: Matte Tin Finish Solderable per MIL-STD-202, o FMMT549A N/A Method 208 Lead Free, RoHS Compliant (Note 1) Weight: 0.008 grams (Approximate) Halogen and Antimony FreeGree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability SOT23 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT549TA 549 7 8 3,000 FMMT549ATA 59A 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Inc. s Green Policy can be found on our website at A Product Line of Diodes Incorporated FMMT549 / FMMT549A Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -1 A C Peak Pulse Current I -2 A CM Base Current I -200 mA B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 500 mW D Thermal Resistance, Junction to Ambient (Note 4) 250 C/W R JA Thermal Resistance, Junction to Lead (Note 5) 197 C/W R JL Operating and Storage Temperature Range -55 to +150 T T C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -35 - - V I = -100A CBO C Collector-Emitter Breakdown Voltage (Note 6) BV -30 - - V I = -10mA CEO C Emitter-Base Breakdown Voltage BV -5 - - V I = -100A EBO E - - -0.1 V = -30V CB Collector Cutoff Current A I CBO - - -10 V = -30V, T = 100C CB A Emitter Cutoff Current I - - -0.1 A V = -4V EBO EB 70 200 - I = -50mA, V = -2V C CE 80 130 - - I = -1A, V = -2V C CE Static Forward Current Transfer Ratio (Note 6) 40 80 - h I = -2A, V = -2V FE C CE FMMT549 100 160 300 - I = -500mA, V = -2V C CE FMMT549A 150 200 500 - I = -500mA, V = -2V C CE - -250 -500 I = - 1A, I = -100mA C B mV Collector-Emitter Saturation Voltage V - -500 -750 I = - 2A, I = -200mA CE(sat) C B FMMT549A - - -300 mV I = -100mA, I = -1mA C B Base-Emitter Saturation Voltage (Note 6) V - -900 -1250 mV I = -1A, I = -100mA BE(sat) C B Base-Emitter Turn-On Voltage (Note 6) V - -850 -1000 mV I = -1A, V = -2V BE(on) C CE Output Capacitance - - 25 pF C V = -10V, f = 1MHz obo CB V = -5V, I = -100mA, CE C Transition Frequency f 100 - - MHz T f = 100MHz t - 50 - ns I = -500mA, V = -10V on C CC Switching Times t - 300 - ns I = I = -50mA off B1 B2 Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). 6. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2% 2 of 5 September 2011 FMMT549 / FMMT549A Diodes Incorporated www.diodes.com Document Number: DS33098 Rev. 4 - 2