X-On Electronics has gained recognition as a prominent supplier of FMMT555TC Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT555TC Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT555TC Diodes Incorporated

FMMT555TC electronic component of Diodes Incorporated
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See Product Specifications
Part No.FMMT555TC
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP Medium Power
Datasheet: FMMT555TC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.473 ea
Line Total: USD 0.47 
Availability - 8198
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8198
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.473
10 : USD 0.3168
100 : USD 0.1672
1000 : USD 0.1364
2500 : USD 0.1232
10000 : USD 0.1188

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMMT555TC from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT555TC and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FMMT555 150V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BV > -150V Case: SOT23 CEO I = -1A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound C I = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Complementary NPN Type: FMMT455 Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Plated Leads, Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (Approximate) C E SOT23 C B B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FMMT555TA AEC-Q101 555 7 8 3,000 FMMT555TC AEC-Q101 555 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See FMMT555 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -160 V CBO Collector-Emitter Voltage V -150 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -1 A C Peak Pulse Current I -2 A CM Base Current I -200 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 500 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 250 C/W JA Thermal Resistance, Junction to Lead (Note 6) R 197 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FMMT555 September 2018 Diodes Incorporated www.diodes.com Document number: DS33100 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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