SOT23 PNP SILICON PLANAR FMMT591 FMMT591 MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Low Equivalent on resistance R =355m at 1A* CE(sat) TYPICAL CHARACTERISTICS E C 0.6 0.6 COMPLEMENTARY TYPE- FMMT491 +25 C I C/I B=10 B PARTMARKING DETAIL - 591 0.5 0.5 0.4 0.4 0.3 0.3 -55 C ABSOLUTE MAXIMUM RATINGS. IC/I B=10 +25 C IC/I B=50 +100 C 0.2 0.2 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -80 V 0.1 0.1 CBO Collector-Emitter Voltage V -60 V CEO 0 0 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Emitter-Base Voltage V -5 V EBO IC-Collector Current IC-Collector Current Peak Pulse Current I -2 A CM VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I -1 A C Base Current I -200 mA B 400 V CE=5V IC/I B=10 Power Dissipation at T =25C P 500 mW amb tot 1.0 Operating and Storage Temperature Range T :T -55 to +150 C +100 C j stg 300 0.8 ELECTRICAL CHARACTERISTICS (at T = 25C). amb +25 C 0.6 200 PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS. -55 C +25 C 0.4 +100 C -55 C 100 Collector-Base Breakdown Voltage V -80 V I =-100A, I =0 (BR)CBO C E 0.2 Collector-Emitter Breakdown V -60 V I =-10mA, I =0* (BR)CEO C B 0 0 Voltage 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C IC-Collector Current IC-Collector Current Collector Cut-Off Current I -100 nA V =-60V CBO CB hFE V IC VBE(sat) v IC Emitter Cut-Off Current I -100 nA V =-4V, I =0 EBO EB C 1.2 10 Collector-Emitter Cut-Off Current I -100 nA V =-60V CES CES VCE=5V Collector-Emitter Saturation V -0.3 V I =-500mA,I =-50mA* 1.0 CE(sat) C B Voltage -0.6 V I =-1A, I =-100mA* C B 0.8 1 Base-Emitter Saturation Voltage V -1.2 V I =-1A, I =-100mA* BE(sat) C B 0.6 DC Base-Emitter Turn-on Voltage V -1.0 V I =-1A, V =-5V* BE(on) C CE 1s -55 C 100ms 0.4 +25 C 0.1 10ms Static Forward Current Transfer h 100 I =-1mA, V =-5V* FE C CE +100 C 1ms 100us Ratio 100 300 I =-500mA, V =-5V* C CE 0.2 80 I =-1A, V =-5V* C CE 15 I =-2A, V =-5V* C CE 0 0.01 1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V Transition Frequency f 150 MHz I =-50mA, V =-10V T C CE I -Collector Current V - Collector Emitter Voltage (V) f=100MHz C CE Output Capacitance C 10 pF V =-10V, f=1MHz VBE(on) v IC Safe Operating Area obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 138 3 - 137 SOT23 PNP SILICON PLANAR FMMT591 FMMT591 MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Low Equivalent on resistance R =355m at 1A* CE(sat) TYPICAL CHARACTERISTICS E C 0.6 0.6 COMPLEMENTARY TYPE- FMMT491 +25 C I C/I B=10 B PARTMARKING DETAIL - 591 0.5 0.5 0.4 0.4 0.3 0.3 -55 C ABSOLUTE MAXIMUM RATINGS. IC/I B=10 +25 C IC/I B=50 +100 C 0.2 0.2 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -80 V 0.1 0.1 CBO Collector-Emitter Voltage V -60 V CEO 0 0 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Emitter-Base Voltage V -5 V EBO IC-Collector Current IC-Collector Current Peak Pulse Current I -2 A CM VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I -1 A C Base Current I -200 mA B 400 V CE=5V IC/I B=10 Power Dissipation at T =25C P 500 mW amb tot 1.0 Operating and Storage Temperature Range T :T -55 to +150 C +100 C j stg 300 0.8 ELECTRICAL CHARACTERISTICS (at T = 25C). amb +25 C 0.6 200 PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS. -55 C +25 C 0.4 +100 C -55 C 100 Collector-Base Breakdown Voltage V -80 V I =-100A, I =0 (BR)CBO C E 0.2 Collector-Emitter Breakdown V -60 V I =-10mA, I =0* (BR)CEO C B 0 0 Voltage 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Emitter-Base Breakdown Voltage V -5 V I =-100A, I =0 (BR)EBO E C IC-Collector Current IC-Collector Current Collector Cut-Off Current I -100 nA V =-60V CBO CB hFE V IC VBE(sat) v IC Emitter Cut-Off Current I -100 nA V =-4V, I =0 EBO EB C 1.2 10 Collector-Emitter Cut-Off Current I -100 nA V =-60V CES CES VCE=5V Collector-Emitter Saturation V -0.3 V I =-500mA,I =-50mA* 1.0 CE(sat) C B Voltage -0.6 V I =-1A, I =-100mA* C B 0.8 1 Base-Emitter Saturation Voltage V -1.2 V I =-1A, I =-100mA* BE(sat) C B 0.6 DC Base-Emitter Turn-on Voltage V -1.0 V I =-1A, V =-5V* BE(on) C CE 1s -55 C 100ms 0.4 +25 C 0.1 10ms Static Forward Current Transfer h 100 I =-1mA, V =-5V* FE C CE +100 C 1ms 100us Ratio 100 300 I =-500mA, V =-5V* C CE 0.2 80 I =-1A, V =-5V* C CE 15 I =-2A, V =-5V* C CE 0 0.01 1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V Transition Frequency f 150 MHz I =-50mA, V =-10V T C CE I -Collector Current V - Collector Emitter Voltage (V) f=100MHz C CE Output Capacitance C 10 pF V =-10V, f=1MHz VBE(on) v IC Safe Operating Area obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 138 3 - 137