X-On Electronics has gained recognition as a prominent supplier of FMMT591ATA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT591ATA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT591ATA Diodes Incorporated

FMMT591ATA electronic component of Diodes Incorporated
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Part No.FMMT591ATA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: FMMT591ATA TRANSISTORS SOT 23
Datasheet: FMMT591ATA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1496 ea
Line Total: USD 1.15 
Availability - 1215
Ship by Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1215
Ship by Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1496
50 : USD 0.5748
100 : USD 0.5174
500 : USD 0.4311
1000 : USD 0.388

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the FMMT591ATA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT591ATA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BV > -40V CEO Case: SOT23 I = -1A High Continuous Current C Case Material: Molded Plastic, Green Molding Compound I = -2A Peak Pulse Current CM UL Flammability Classification Rating 94V-0 Low Saturation Voltage V < -500mV -1A CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 R = 350m for a Low Equivalent On-resistance SAT Terminals: Finish Matte Tin Plated Leads, Solderable per Complementary NPN type: FMMT491A MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.008 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Application PPAP Capable (Note 4) Power MOSFET gate driving Low loss power switching C E SOT23 C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT591ATA AEC-Q101 91A 7 8 3,000 FMMT591ATC AEC-Q101 91A 13 8 10,000 FMMT591AQTA Automotive 91A 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated FMMT591A Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current I -1 A C Peak Pulse Current I -2 A CM Base Current -200 mA I B Peak Base Current -1 A I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 500 mW D Thermal Resistance, Junction to Ambient (Note 6) R 250 C/W JA Thermal Resistance, Junction to Lead (Note 7) 197 R C/W JL Operating and Storage Temperature Range -55 to +150 T T C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 December 2013 FMMT591A Diodes Incorporated www.diodes.com Document number: DS33105 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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