X-On Electronics has gained recognition as a prominent supplier of FMMT591QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT591QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT591QTA Diodes Incorporated

FMMT591QTA electronic component of Diodes Incorporated
FMMT591QTA Diodes Incorporated
FMMT591QTA Bipolar Transistors - BJT
FMMT591QTA  Semiconductors

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See Product Specifications
Part No. FMMT591QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 60 V 1 A 150MHz 500 mW Surface Mount SOT-23-3
Datasheet: FMMT591QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5657 ea
Line Total: USD 0.57 
Availability - 3220
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 5
Multiples : 5
5 : USD 0.2391
50 : USD 0.2339
150 : USD 0.1975
500 : USD 0.1752

3220
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.5657
10 : USD 0.4161
100 : USD 0.2536
500 : USD 0.1906
1000 : USD 0.1744
3000 : USD 0.1432
9000 : USD 0.1352
24000 : USD 0.134
45000 : USD 0.1294

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the FMMT591QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT591QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) has been designed to meet Case: SOT23 the stringent requirements of Automotive Applications. Case Material: molded plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Plated Leads, Solderable per BV > -60V CEO MIL-STD-202, Method 208 I = -1A High Continuous Collector Current C Weight: 0.008 grams (Approximate) I = -2A Peak Pulse Current CM R = 295m for a Low Equivalent On-Resistance SAT h Characterized up to -2A for High Current Gain Hold Up FE Complementary NPN Type: FMMT491Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) C E SOT23 C B B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel FMMT591QTA Automotive 591 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See FMMT591Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -1 A C Peak Pulse Current I -2 A CM Base Current I -200 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 500 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 250 C/W JA Thermal Resistance, Junction to Lead (Note 7) R 197 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FMMT591Q March 2017 Diodes Incorporated www.diodes.com Document number: DS37010 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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