FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size Tape width Quantity (inches (mm) per reel FMMT596TA 7 8 3,000 Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage V -220 V CBO Collector-emitter voltage V -200 V CEO Emitter-base voltage V -5 V EBO Peak pulse current I -1 A CM Continuous collector current I -0.3 A C Base current I -200 mA B Power dissipation at T =25C P 500 mW amb tot Operating and storage temperature range T :T -55 to +150 C j stg Issue 4 - July 2007 1 www.zetex.com Zetex Semiconductors plc 2007FMMT596 Electrical characteristics (T = 25C) amb Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown V -220 V I =-100 A (BR)CBO C voltage (*) Collector-emitter breakdown V -200 V I =-10mA (BR)CEO C voltage Emitter-base breakdown V -5 V I =-100 A (BR)EBO E voltage Collector cut-off current I -100 nA V =-200V CBO CB Emitter cut-off current I -100 nA V =-4V EBO EB Collector-emitter cut-off I -100 nA V =-200V CES CES current Collector-emitter saturation V -0.2 V I =-100mA, I =-10mA, CE(sat) C B voltage -0.35 V I =-250mA, B (*) I =-25mA B (*) Base-emitter saturation V -1.0 V I =-250mA, I =-25mA BE(sat) C B voltage Base-emitter turn-on voltage V -0.9 V I =-250mA, BE(on) C (*) V =-10V CE Static forward current h 100 I =-1mA, V =-10V FE C CE transfer ratio (*) 100 I =-100mA, V =-10V C CE (*) 85 300 I =-250mA, V =-10V C CE (*) 35 I =-400mA, V =-10V C CE Transition frequency f 150 MHz I =-50mA, V =-10V, T C CE f=100MHz Output capacitance C 10 pF V =-10V, f=1MHz obo CB Switching times td 22 ns I =-200mA, V =-80V C CC I =I =-20mA tr 19 b1 b2 ts 472 tf 70 Switching times td 44 ns I =-100mA, V =-80V C CC I =I =-10mA tr 31 b1 b2 ts 665 tf 76 NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle 2%. Issue 4 - July 2007 2 www.zetex.com Zetex Semiconductors plc 2007