X-On Electronics has gained recognition as a prominent supplier of FMMT634QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMMT634QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMMT634QTA Diodes Incorporated

FMMT634QTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.FMMT634QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS Mid-Perf Transistor
Datasheet: FMMT634QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7023 ea
Line Total: USD 0.7 
Availability - 3168
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
467
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5421
10 : USD 0.439
30 : USD 0.395
100 : USD 0.3417
500 : USD 0.2997
1000 : USD 0.2863

3168
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7023
10 : USD 0.4782
100 : USD 0.3164
500 : USD 0.2691
1000 : USD 0.2414
3000 : USD 0.2322
6000 : USD 0.231
9000 : USD 0.2194

   
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We are delighted to provide the FMMT634QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMMT634QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) has been designed to meet the Case: SOT23 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Plated Leads, Solderable per MIL- BV > 100V CEO STD-202, Method 208 I = 900mA High Continuous Collector Current C Weight 0.008 grams (Approximate) I = 5A Peak Pulse Current CM 625mW Power Dissipation Applications h > 5k up to 2A for High Current Gain Hold up FE Complementary PNP Type: FMMT734Q Automotive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Lamp Halogen and Antimony Free. Green Device (Note 3) Relay The FMMT634Q is suitable for automotive applications Solenoid Driving requiring specific change control it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. FMMT634Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 120 V V CBO Collector-Emitter Voltage 100 V V CEO Emitter-Base Voltage V 12 V EBO Continuous Collector Current I 900 mA C Peak Pulse Current I 5 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 625 mW P D Power Dissipation (Note 6) 806 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 200 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 155 C/W JA Thermal Resistance, Junction to Leads (Note 7) R 194 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For a device mounted with the exposed collector pad on 25mm 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is measured at t 5s. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FMMT634Q October 2019 Diodes Incorporated www.diodes.com Document number: DS37051 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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