A Product Line of Diodes Incorporated FMMT6520 350V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data Case: SOT-23 BV > -350V CEO UL Flammability Rating 94V-0 Maximum Continuous Collector Current I = -500mA C Case material: molded Plastic. 330mW power dissipation Complementary part number FMMT6517 Moisture Sensitivity: Level 1 per J-STD-020 Lead Free, RoHS Compliant (Note 1) Terminals: Matte Tin Finish Solderable per MIL-STD-202, Halogen and Antimony FreeGree Device (Note 2) Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (Approximate) Applications Power switches C SOT-23 B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT6520TA 520 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Inc. s Green Policy can be found on our website at A Product Line of Diodes Incorporated FMMT6520 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -350 V V CBO Collector-Emitter Voltage V -350 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -500 mA C Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 330 mW D Thermal Resistance, Junction to Ambient (Note 4) R 379 C/W JA Thermal Resistance, Junction to Lead (Note 5) 350 R C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -350 V I = -100A CBO C Collector-Emitter Breakdown Voltage (Note 6) -350 V BV I = -1mA CEO C Emitter-Base Breakdown Voltage -5 V BV I = -10A EBO E Collector Cutoff Current -50 nA I V = -250V CBO CB Emitter Cutoff Current -50 nA I V = -3V EBO EB 20 I = -1mA, V = -10V C CE 30 I = -10mA, V = -10V C CE Static Forward Current Transfer Ratio 30 I = -30mA, V = -10V h 200 C CE FE (Note 6) 20 200 I = -50mA, V = -10V C CE 15 I = -100mA, V = -10V C CE -300 mV I =- 10mA, I = -1mA C B Collector-Emitter Saturation Voltage -350 mV I =- 20mA, I = -2mA C B V CE(sat) (Note 6) -500 mV I = -30mA, I = -3mA C B -1000 mV I = -50mA, I = -5mA C B I = -10mA, I = -1mA -750 C B Base-Emitter Saturation Voltage(Note 6) -850 mV V I = -20mA, I = -2mA BE(sat) C B -900 I = -30mA, I = -3mA C B Base-Emitter Turn-On Voltage(Note 6) V -2.0 V I = -100mA, V = -10V BE(on) C CE Output Capacitance C 6 pF V = -20V, f = 1MHz obo CB V = -20V, I = -10mA, CE C Transition Frequency 50 MHz f T f = 20MHz Note: 6. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2% 2 of 4 August 2011 Diodes Incorporated www.diodes.com FMMT6520 Document Number: DS33123 Rev. 3 - 2