A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data Case: SOT23 BV > -20V CEO Case Material: molded plastic, Green molding compound I = -1.5A Continuous Collector Current C UL Flammability Classification Rating 94V-0 I = -6A Peak Pulse Current CM Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage V < -200mV -1A CE(sat) Terminals: Finish Matte Tin Plated Leads, Solderable per R = 97m for a low equivalent on-resistance CE(SAT) MIL-STD-202, Method 208 625mW power dissipation Weight 0.008 grams (approximate) h characterised up to -6A for high current gain hold-up FE Complementary NPN Type: FMMT618 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Applications Halogen and Antimony Free. Green Device (Note 3) Gate Driving MOSFETs and IGBTs Qualified to AEC-Q101 Standards for High Reliability DC-DC Converters PPAP capable (Note 4) Charging circuit Power switches SOT23 E C C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FMMT718TA AEC-Q101 718 7 8 3,000 FMMT718TC AEC-Q101 718 13 8 10,000 FMMT718QTA Automotive 718 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated FMMT718 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -1.5 A C Peak Pulse Current I -6 A CM Base Current I -500 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 625 mW D Power Dissipation (Note 7) P 806 mW D Thermal Resistance, Junction to Ambient (Note 6) 200 C/W R JA Thermal Resistance, Junction to Ambient (Note 7) 155 R C/W JA Thermal Resistance, Junction to Leads (Note 8) 194 R C/W JL Operating and Storage Temperature Range -55 to +150 T T C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note 6, except the device is measured at t 5 sec. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 October 2012 FMMT718 Diodes Incorporated www.diodes.com Document Number: DS31924 Rev. 4 - 2