FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BV > -20V Case: SOT23 CEO I = -1.5A Continuous Collector Current Case Material: molded plastic, Green molding compound C I = -6A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Low Saturation Voltage V < -200mV -1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) R = 97m for a low equivalent on-resistance Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) 625mW power dissipation MIL-STD-202, Method 208 h characterized up to -6A for high current gain hold-up Weight 0.008 grams (Approximate) FE Complementary NPN Type: FMMT618 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Applications Halogen- and Antimony-Free. Green Device (Note 3) Gate Driving MOSFETs and IGBTs For automotive applications requiring specific change DC-DC Converters control (i.e. parts qualified to AEC-Q100/101/200, PPAP Charging circuit capable, and manufactured in IATF 16949 certified facilities), Power switches please contact us or your local Diodes representative. FMMT718 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current -1.5 A IC Peak Pulse Current -6 A I CM Base Current -500 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 625 mW D Power Dissipation (Note 6) P 806 mW D Thermal Resistance, Junction to Ambient (Note 5) R 200 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 155 C/W JA Thermal Resistance, Junction to Leads (Note 7) R 194 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as note 5, except the device is measured at t 5 sec. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 January 2021 FMMT718 Diodes Incorporated www.diodes.com Document Number: DS31924 Rev. 5 - 2