FMMTA12 Not Recommended for New Design Please Use FMMTA14 SOT23 NPN SILICON PLANAR FMMTA12 FMMTA13 DARLINGTON TRANSISTORS FMMTA14 ISSUE 4 - DECEMBER 1996 COMPLEMENTARY TYPES - FMMTA12 NONE FMMTA13 FMMTA63 FMMTA14 FMMTA64 E C B PARTMARKING DETAILS FMMTA12 3W FMMTA13 1M FMMTA14 1N ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA12 FMMTA13/14 UNIT Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Collector-Emitter Voltage V 20 40 V CES Emitter-Base Voltage V 10 V EBO Continuous Collector Current I 300 mA C Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter FMMTA12 V 20 V I =100A, I =0* (BR)CES C B Breakdown Voltage FMMTA13/14 40 V I =100A, I =0* C B Collector Cut-Off FMMTA12 I 100 nA V =15V, V =0 CES CB BE Current Collector Cut-Off FMMTA12 I 100 nA V =15V, I =0 CBO CB E Current FMMTA13/14 100 nA V =30V, I =0 CB E Emitter Cut-Off Current I 100 nA V =10V, I =0 EBO EB C Static Forward FMMTA12 h 20K I =10mA, V =5V* FE C CE Current Transfer FMMTA13 5K I =10mA, V =5V* C CE Ratio FMMTA13 10K I =100mA, V =5V* C CE FMMTA14 10K I =10mA, V =5V* C CE FMMTA14 20K I =100mA, V =5V* C CE Collector-Emitter FMMTA12 V 1.0 V I =10mA, I =0.01mA CE(sat) C B Saturation Voltage FMMTA13/14 0.9 V I =100mA, I =0.1mA C B Base-Emitter FMMTA12 V 1.4 V I =10mA, V =5V* BE(on) C CE On Voltage FMMTA13/14 2.0 V I =100mA,V =5V* C CE *Measured under pulsed conditions. Pulse width =300s. Duty cycle 2% Spice parameter data is available upon request for these devices For typical graphs see FMMT38A datasheet