SOT23 PNP SILICON PLANAR FMMTA56 MEDIUM POWER TRANSISTORS ISSUE 4 MARCH 2001 FEATURES E * Gain of 50 at I =100mA C C PARTMARKING DETAIL - FMMTA56 - 2G B FMMTA56R - MB SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA56 UNIT Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -80 V CEO Emitter-Base Voltage V -4 V EBO Continuous Collector Current I -500 mA C Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature T :T -55 to +150 C j stg Range ELECTRICAL CHARACTERISTICS (at T = 25C). amb FMMTA56 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown V -80 V I =-1mA, I =0* (BR)CEO C B Voltage Emitter-Base Breakdown V -4 V I =-100 A, I =0 (BR)EBO E C Voltage Collector-Emitter Cut-Off I -0.1 A V =-60V CES CE Current Collector-Base Cut-Off Current I -0.1 A V =-80V, I =0 CBO CB E V =-60V, I =0 CB E Static Forward Current Transfer h 50 I =-10mA, V =1V* FE C CE Ratio 50 I =-100mA, V =1V* C CE Collector-Emitter Saturation V -0.25 V I =-100mA, I =-10mA* CE(sat) C B Voltage Base-Emitter V -1.2 V I =-100mA, V =-1V* BE(on) C CE Turn-On Voltage Transition f 100 MHz I =-10mA, V =-2V T C CE Frequency f=100MHz *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% TBAX-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Bipolar Transistors - BJT category: Click to view products by Diodes Incorporated manufacturer: Other Similar products are found below : 619691C MCH4017-TL-H BC546/116 BC557/116 BSW67A NTE187A NTE195A NTE2302 NTE2330 NTE63 C4460 2SA1419T-TD-H 2SA1721-O(TE85L,F) 2SA2126-E 2SB1204S-TL-E 2SC5488A-TL-H 2SD2150T100R SP000011176 2N2369ADCSM 2SC2412KT146S 2SC5490A-TL-H 2SD1816S-TL-E 2SD1816T-TL-E CMXT2207 TR CPH6501-TL-E MCH4021-TL-E US6T6TR 732314D CMXT3906 TR CPH3121-TL-E CPH6021-TL-H 873787E UMX21NTR EMT2T2R MCH6102-TL-E FP204-TL-E NJL0302DG 2N3583 2N3879 2SA1434-TB-E 2SC3143-4-TB-E 2SD1621S-TD-E 30A02MH-TL-E NSV40301MZ4T1G NTE13 NTE15 NTE16001 NTE16006 NTE26 NTE320