SOT23 NPN SILICON PLANAR HIGH GAIN FMMTL618 MEDIUM POWER TRANSISTOR ISSUE 1 NOVEMBER 1997 FEATURES Very low equivalent on-resistance R =140m at 1.25A CE(sat) E COMPLEMENTARY TYPE FMMTL718 C PARTMARKING DETAIL L68 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5V EBO Continuous Collector Current I 1.25 A C Peak Pulse Current I 4A CM Base Current I 200 mA B Power Dissipation at T =25C P 500 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stgFMMTL618 ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 60 105 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 20 30 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 58.5 V I =100A (BR)EBO E Breakdown Voltage Collector Cut-Off Current I 10 nA V =16V CBO CB Emitter Cut-Off Current I 10 nA V =4V EBO EB Collector Cut-Off Current I 10 nA V =16V CES CE Collector-Emitter V 18 35 mV I =100mA, I =10mA* CE(sat) C B Saturation Voltage 80 160 mV I =500mA, I =25mA* C B 130 200 mV I =1A, I =100mA* C B 170 280 mV I =1.25A, IB=100mA* C 260 350 mV I =2A, I =200mA* C B Base-Emitter V 1000 1100 mV I =1.25A, I =100mA* BE(sat) C B Saturation Voltage Base-Emitter V 850 1000 mV I =1.25A, V =2V* BE(on) C CE Turn On Voltage Static Forward h 200 400 I =10mA, V =2V FE C CE Current Transfer Ratio 300 440 I =200mA, V =2V* C CE 250 400 I =500mA, V =2V* C CE 200 300 I =1A, V =2V* C CE 100 190 I =2A, V =2V* C CE 50 100 I =3A, V =2V* C CE Transition Frequency f 195 MHz I =50mA, V =10V T C CE f=100MHz Collector-Base C 912 pF V =10V, f=1MHz obo CB Breakdown Voltage Switching times t 72 ns I =1A, V =10V on C CC t 388 ns I =-I =10mA off B1 B2 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%