X-On Electronics has gained recognition as a prominent supplier of FZT1149ATA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT1149ATA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT1149ATA Diodes Incorporated

FZT1149ATA electronic component of Diodes Incorporated
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See Product Specifications
Part No.FZT1149ATA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN High Gain & Crnt
Datasheet: FZT1149ATA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5899 ea
Line Total: USD 0.59 
Availability - 4398
Ship by Fri. 11 Oct to Tue. 15 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 1000
Multiples : 1000
1000 : USD 0.3604

919
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 370
Multiples : 1
370 : USD 0.3517

338
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 339
Multiples : 1
339 : USD 0.3834

940
Ship by Mon. 14 Oct to Thu. 17 Oct
MOQ : 1
Multiples : 1
1 : USD 0.813
10 : USD 0.6642
30 : USD 0.5897
100 : USD 0.5172
500 : USD 0.4714
1000 : USD 0.4505

4398
Ship by Fri. 11 Oct to Tue. 15 Oct
MOQ : 1
Multiples : 1
1 : USD 0.5899
10 : USD 0.5186
100 : USD 0.3761
500 : USD 0.3438
1000 : USD 0.33

338
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 310
Multiples : 1
310 : USD 0.3952

5820
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 1000
Multiples : 1000
1000 : USD 0.3956

919
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 362
Multiples : 1
362 : USD 0.3626

970
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 1000
Multiples : 1000
1000 : USD 0.3714

54320
Ship by Mon. 07 Oct to Fri. 11 Oct
MOQ : 1000
Multiples : 1000
1000 : USD 0.3853

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the FZT1149ATA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT1149ATA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The FZT1149ATA with Diodes Incorporated Bipolar Transistors – BJT NPN High Gain & Crnt is a high-reliability transistor specifically designed to cope with reverse bias emitter-base breakdown voltages up to 140V. This device is characterized by an excellent high-speed switching performance, low collector-emitter saturation voltage, and low on-state resistance. It has an asymptotic I ft of 25mA. It also features high gain up to 50 and a decent minimum current gain of 150. The power dissipation rating is up to 600mW at a collector current of 3A, and an operating junction temperature (TJ) of 150°C. This device was designed using a 6,000V dielectric isolation process with diode passivation to improve the power dissipation capabilities.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
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DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
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ZTX

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