X-On Electronics has gained recognition as a prominent supplier of FZT558TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT558TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT558TA Diodes Incorporated

FZT558TA electronic component of Diodes Incorporated
Images are for reference only
See Product Specifications
Part No.FZT558TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 400 V 200 mA 50MHz 2 W Surface Mount SOT-223-3
Datasheet: FZT558TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6118 ea
Line Total: USD 0.61

Availability - 1678
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1678
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6118
10 : USD 0.5359
100 : USD 0.3531
500 : USD 0.3301
1000 : USD 0.2887
2000 : USD 0.261
5000 : USD 0.2541
10000 : USD 0.2461
25000 : USD 0.2438

606
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.936
5 : USD 0.5668
25 : USD 0.5096
42 : USD 0.4043
114 : USD 0.3822

1940
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.2762

450
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 438
Multiples : 1
438 : USD 0.2967

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the FZT558TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT558TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BV > -400V CEO Case: SOT223 I = -200mA High Continuous Current C Case Material: Molded Plastic. Green Molding Compound. Excellent h Characteristics up to -100mA FE UL Flammability Rating 94V-0 Low Saturation Voltage V < -200mV -20mA CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 Complementary NPN Type: FZT458 Terminals: Finish - Matte Tin Plated Leads. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability C SOT223 B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT558TA AEC-Q101 FZT558 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT558 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -400 V CBO Collector-Emitter Voltage -400 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -200 mA I C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 2 W Power Dissipation P D (Note 6) 3 W (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 6) 41.7 C/W Thermal Resistance, Junction to Leads (Note 7) R 19.41 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on 50mm x 50mm single sided 2oz weight copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT558 February 2015 Diodes Incorporated www.diodes.com Document number: DS33139 Rev.4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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