X-On Electronics has gained recognition as a prominent supplier of FZT649TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT649TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT649TA Diodes Incorporated

FZT649TA electronic component of Diodes Incorporated
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See Product Specifications
Part No.FZT649TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 25V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
Datasheet: FZT649TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.1768 ea
Line Total: USD 176.8 
Availability - 7760
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
7760
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1768
3000 : USD 0.1768
4000 : USD 0.1768
10000 : USD 0.1768
15000 : USD 0.1768

604
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.4256
50 : USD 0.3414
150 : USD 0.3052
1000 : USD 0.26
2000 : USD 0.24
5000 : USD 0.228

3480
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.66
10 : USD 0.4532
100 : USD 0.3289
500 : USD 0.2717
1000 : USD 0.2574
2000 : USD 0.2376

43650
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.2437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT649TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT649TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data BV > 25V Case: SOT223 CEO I = 3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound C I = 8A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < 300mV 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) Complementary PNP Type: FZT749 Terminals: Finish - Matte Tin Plated Leads Solderable per Lead-Free Finish RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability SOT223 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT649TA AEC-Q101 FZT649 7 12 1,000 FZT649TC AEC-Q101 FZT649 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT649 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 35 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current 3 A IC Peak Pulse Current 8 A I CM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit (Note 5) 2 W Power Dissipation P D (Note 6) 3 W (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 6) 41.7 C/W Thermal Resistance, Junction to Leads (Note 7) 12.9 C/W RJL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 March 2015 FZT649 Diodes Incorporated www.diodes.com Document Number DS33148 Rev. 6 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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