X-On Electronics has gained recognition as a prominent supplier of FZT705TC Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. FZT705TC Darlington Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

FZT705TC Diodes Incorporated

FZT705TC electronic component of Diodes Incorporated
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See Product Specifications
Part No.FZT705TC
Manufacturer: Diodes Incorporated
Category: Darlington Transistors
Description: Darlington Transistors PNP Darlington
Datasheet: FZT705TC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7524 ea
Line Total: USD 0.75 
Availability - 3251
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3251
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7524
10 : USD 0.5819
100 : USD 0.4422
500 : USD 0.3674
1000 : USD 0.3432
2000 : USD 0.3168
4000 : USD 0.3157
8000 : USD 0.3036

3309
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.854
10 : USD 0.7574
38 : USD 0.4578
103 : USD 0.4326
2000 : USD 0.4172

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT705TC from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT705TC and other electronic components in the Darlington Transistors category and beyond.

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SOT223 PNP SILICON PLANAR MEDIUM FZT705 POWER DARLINGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES C * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A E COMPLEMENTARY TYPE FZT 605 C PART MARKING DETAIL FZT705 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -140 V CBO Collector-Emitter Voltage V -120 V CEO Emitter-Base Voltage V -10 V EBO Peak Pulse Current I -4 A CM Continuous Collector Current I -2 A C Power Dissipation P 2W TOT Operating and Storage Temperature Range tj:tstg -55 to +150 C ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltages V -140 V I =-100mA (BR)CBO C V -120 V I =-10mA* (BR)CEO C V -10 V I =-100A (BR)EBO E Collector Cut-Off I -0.1 A V =-120V CBO CB Current -10 A V =-120V, T =100C CB amb I -10 V =-80V A CES CES Emitter Cut-Off Current I -0.1 A V =-8V EBO EB SaturationVoltages V -1.3 V I =-1A, I =-1mA CE(sat) C B -2.5 V I =-2A, I =-2mA C B V -1.8 V I =-1A, I =-10mA BE(sat) C B Base-Emitter Turn-On V -1.7 V I =-1A, V =-5V C BE(on) CE Voltage Static Forward Current h 3000 I =-10mA, V =-5V FE C CE Transfer 3000 I =-100mA, V =-5V C CE 3000 30000 I =-1A, V =-5V C CE 2000 I =-2A, V =-5V C CE Transitional f 160 MHz I =-100mA, V =-10V T C CE Frequency f=20MHz Output Capacitance C 15 pF V =-10V, f=1MHz obo EB Switching Times T 0.6 s I =-0.5A, V =-10V on C CE I =I =0.5mA B1 B2 T 0.8 s off *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 230 V - (Volts) V - (Volts) V - (Volts) h - Gain FZT705 FZT704 TYPICAL CHARACTERISTICS -55 C IC/IB=1000 +100 C +25 C VCE=-5V 1.8 16k +25C +100C +175 C -55 C 1.6 14k 1.4 12k 1.2 10k 1.0 8k 0.8 6k 0.6 4k 0.4 2k 0 0.2 0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 110 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.4 -55C -55 C VCE=-5V +25 C IC/IB=1000 +25C 1.8 +100C 2.2 +100 C +175C 1.6 2.0 1.4 1.8 1.2 1.6 1.0 1.4 0.8 1.2 0.6 1.0 0.4 0.8 0.2 0.6 0.001 0.01 0.1 110 20 0.001 0.01 0.1 110 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test at Tamb=25 C Single Pulse Test at Tamb=25 C 10 10 1 1 D. C. 1s 100ms 10ms D.C. 1. 0ms 1s 100s 0.1 100ms 0.1 10ms 1.0ms 100s 1 10 100 1000 110 100 1000 V - Collector Voltage (Volts) V - Collector Voltage (Volts) CE CE Safe Operating Area FZT704 Safe Operating Area FZT705 3 - 231

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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