FZT751Q Green 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the Automotive Lighting stringent requirements of automotive applications. MOSFET and IGBT Gate Driving Features Mechanical Data BV > -60V Case: SOT223 CEO I = -3A High Continuous Current C Case Material: Molded Plastic. Green Molding Compound. I = -6A Peak Pulse Current CM UL Flammability Rating 94V-0 Low Saturation Voltage V < -300mV -1A CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020 Complementary NPN Type: FZT651Q Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL- Lead-Free Finish RoHS Compliant (Notes 1 & 2) STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT223 C E C C B B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel FZT751QTA Automotive FZT751 7 12 1,000 FZT751QTC Automotive FZT751 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See FZT751Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -3 A C Peak Pulse Current I -6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 2 W Power Dissipation P D (Note 7) 3 W (Note 6) 62.5 C/W Thermal Resistance, Junction to Ambient RJA (Note 7) 41.7 C/W Thermal Resistance, Junction to Leads (Note 8) R 12.9 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in steady-state. 7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT751Q March 2018 Diodes Incorporated www.diodes.com Document number: DS36963 Rev. 3 - 2