X-On Electronics has gained recognition as a prominent supplier of FZT751TC Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT751TC Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT751TC Diodes Incorporated

FZT751TC electronic component of Diodes Incorporated
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See Product Specifications
Part No.FZT751TC
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP Medium Power
Datasheet: FZT751TC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.3592 ea
Line Total: USD 1436.8 
Availability - 776000
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
776000
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.3592

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT751TC from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT751TC and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT751 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data BV > -60V Case: SOT223 CEO I = -3A High Continuous Current C Case Material: Molded Plastic. Green Molding Compound I = -6A Peak Pulse Current CM UL Flammability Rating 94V-0 Low Saturation Voltage V < -300mV -1A CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 Complementary NPN Type: FZT651 Terminals: Finish - Matte Tin Plated Leads, Solderable per Lead-Free Finish RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability Applications Automotive Lighting MOSFET and IGBT Gate Driving SOT223 C E B C C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT751TA AEC-Q101 FZT751 7 12 1,000 FZT751TC AEC-Q101 FZT751 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT751 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -80 V V CBO Collector-Emitter Voltage -60 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -3 A I C Peak Pulse Current I -6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 2 W Power Dissipation P D (Note 6) 3 W (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 6) 41.7 C/W Thermal Resistance, Junction to Leads (Note 7) 12.9 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class 3A Electrostatic Discharge - Human Body Model ESD HBM 4,000 V C Electrostatic Discharge - Machine Model ESD MM 400 V Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT751 March 2015 Diodes Incorporated www.diodes.com Document Number DS32208 Rev. 9 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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