X-On Electronics has gained recognition as a prominent supplier of FZT855TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT855TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT855TA Diodes Incorporated

FZT855TA electronic component of Diodes Incorporated
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See Product Specifications
Part No.FZT855TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN High Current
Datasheet: FZT855TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.4619 ea
Line Total: USD 461.9

Availability - 970
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
28634
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 7
Multiples : 1
7 : USD 4.35
10 : USD 3.5875
100 : USD 1.6
500 : USD 0.7487
1000 : USD 0.5888
2500 : USD 0.5238
5000 : USD 0.5138
10000 : USD 0.5062

2
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 103
Multiples : 1
103 : USD 0.5141

3880
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.5091
2000 : USD 0.4351

1416
Ship by Wed. 31 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 0.7653
10 : USD 0.6396
30 : USD 0.5759
100 : USD 0.5121
500 : USD 0.4313
1000 : USD 0.4127

12771
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.8556
10 : USD 0.721
100 : USD 0.6003
500 : USD 0.5232
1000 : USD 0.4382
2000 : USD 0.4186
5000 : USD 0.4186
25000 : USD 0.4025

703
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 1.053
5 : USD 0.9282
25 : USD 0.689
67 : USD 0.65
500 : USD 0.6266

3880
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.5091
2000 : USD 0.4351

6790
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.5197
2000 : USD 0.4334
5000 : USD 0.425

970
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.4619
2000 : USD 0.3966
5000 : USD 0.3825
25000 : USD 0.3786

970
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.4619
2000 : USD 0.3966
5000 : USD 0.3825
25000 : USD 0.3786

43650
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.455

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the FZT855TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT855TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BV > 150V Case: SOT223 CEO I = 5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound C I = 10A Peak Pulse Current UL Flammability Rating 94V-0 CM Very Low Saturation Voltage V < 110mV 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) R = 50m for a Low Equivalent On-Resistance Terminals: Finish - Matte Tin Plated Leads Solderable per CE(sat) h Specified Up to 10A for a High Gain Hold-Up MIL-STD-202, Method 208 FE Complementary PNP Type: FZT955 Weight: 0.112 grams (Approximate) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FZT855TA FZT855 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT855 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 250 V V CBO Collector-Emitter Voltage 150 V V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 5 A C Peak Pulse Current I 10 A CM Base Current I 1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 5) Power Dissipation 24 W P D Linear Derating Factor 1.6 mW/C (Note 6) 12.8 (Note 5) 42 R JA Thermal Resistance, Junction to Ambient (Note 6) 78 C/W R JA Thermal Resistance Junction to Lead (Note 7) 8.8 R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 52mm X 52mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions device measured when operating in steady state condition. 6. Same as Note 5, except the device is mounted on 25mm X 25mm single sided 1oz weight copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT855 May 2015 Diodes Incorporated www.diodes.com Document Number DS33176 Rev. 6 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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