SOT223 NPN SILICON PLANAR FZTA14 DARLINGTON TRANSISTOR ISSUE 3 JANUARY 1996 PARTMARKING DETAIL:- DEVICE TYPE IN FULL C COMPLEMENTARY TYPE :- FZTA64 E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V 30 V CES Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 10 V EBO Continuous Collector Current I 1A C Power Dissipation at T =25C P 2W amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 30 V I =100A, V =0 (BR)CES C BE Breakdown Voltage Collector Cut-Off I 100 nA V =30V, I =0 CBO CB E Current Emitter Cut-Off Current I 100 nA V =10V, I =0 EBO EB C Collector-Emitter V 1.5 V I =100mA, I =0.1mA* CE(sat) C B Saturation Voltage 1.6 V I =1A, I =1mA* C B Base-Emitter V 2.0 V I =100mA, V =5V* BE(on) C CE Turn-On Voltage Base-Emitter V 2.0 V I =100mA, I =0.1mA BE(sat) C B Saturation Voltage 2.2 V I =1A, I =1mA C B Static Forward Current h 10K I =10mA, V =5V* FE C CE Transfer Ratio 20K I =100mA, V =5V* C CE 5K I =1A, V =5V* C CE Transition Frequency f 170 MHz I =50mA, V =5V* T C CE f=20MHz *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT38C datasheet. 3 - 301