PART OBSOLETE - CONTACT US HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-363 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Case Material: Molded Plastic, Green Molding Compound. Halogen, Antimony and Beryllium Free. Green Device UL Flammability Classification Rating 94V-0 (Note 3) Moisture Sensitivity: Level 1 per J-STD-020D For automotive applications requiring specific change Terminal Connections: See Schematic & Pin Configuration control (i.e. parts qualified to AEC-Q100/101/200, PPAP Terminals: FinishMatte Tin Annealed over Alloy 42 Lead- capable, and manufactured in IATF 16949 certified facilities), Frame. Solderable per MIL-STD-202, Method 208 please contact us or your local Diodes representative. Marking Information: See Page 6 HBDM60V600W Maximum Ratings: Total Device T = 25C (unless otherwise specified) A Characteristic Symbol Value Unit Operating and Storage Temperature Range T T -55 to +150 C OP, stg Thermal Characteristics: Total Device Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW PD Thermal Resistance, Junction to Ambient Air (Note 5) 625 C/W R JA Maximum Ratings: Sub-Component Devices T = 25C unless otherwise specified A Q1-PNP Transistor Q2-NPN Transistor Characteristic Symbol Unit (MMBT2907A) (MMBTA06) V -60 80 V Collector-Base Voltage CBO V -60 65 V Collector-Emitter Voltage CEO -5.5 6 V Emitter-Base Voltage V EBO Collector Current - Continuous (Note 5) I -600 500 mA C Note: 5. Device mounted on FR-4 substrate printed circuit board with 1 inch square 2oz copper pad area Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V -60 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -60 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5.5 V V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current -10 nA I V = -50V, I = 0 CBO CB E Collector Cutoff Current -50 nA ICEX VCE = -30V, VEB(OFF) = -0.5V Base Cutoff Current I -50 nA V = -30V, V = -0.5V BL CE EB(OFF) ON CHARACTERISTICS (Note 6) I = -100A, V = -10V C CE 100 I = -1.0mA, V = -10V 100 C CE DC Current Gain 100 h I = -10mA, V = -10V FE C CE 100 300 I = -150mA, V = -10V C CE 50 I = -500mA, V = -10V C CE -0.3 I = -150mA, I = -15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.5 I = -500mA, I = -50mA C B -0.95 I = -150mA, I = -15mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.3 I = -500mA, I = -50mA C B SMALL SIGNAL CHARACTERISTICS V = -2.0V, I = -10mA, CE C Current Gain-Bandwidth Product 100 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time t 45 ns on V = -30V, I = -150mA, CE C Delay Time 10 ns t d I = -15mA B1 Rise Time 40 ns t r Turn-Off Time 100 ns toff V = -6.0V, I = -150mA, CC C Storage Time t 80 ns s I = I = -15mA B1 B2 Fall Time t 30 ns f 2 of 9 June 2021 HBDM60V600W Diodes Incorporated www.diodes.com Document number: DS30701 Rev. 9 - 4 OBSOLETE PART DISCONTINUED