PART OBSOLETE CONTACT US IMT17 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-26 Small Surface Mount Package Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Lead Free By Design/RoHS Compliant (Note 1) Moisture Sensitivity: Level 1 per J-STD-020D Gree Device (Note 2) Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.016 grams (approximate) C1 B2 E2 E1 B1 C2 Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -60 V VCBO Collector-Emitter Voltage -50 V V CEO Emitter-Base Voltage -5.0 V V EBO Continuous Collector Current -500 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 300 mW A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 417 C /W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage -60 V V I = -100A (BR)CBO C Collector-Emitter Breakdown Voltage -50 V V I = -1.0mA (BR)CEO C Emitter-Base Breakdown Voltage -5.0 V V(BR)EBO IE = -100A Collector Cutoff Current I -0.1 A V = -30V CBO CB Emitter Cutoff Current I -0.1 A V = -4.0V EBO EB ON CHARACTERISTICS (Note 4) DC Current Gain 120 390 h V = -3.0V, I = -100mA FE CE C Collector-Emitter Saturation Voltage (Note 3) -0.6 V V I = -500mA, I = -50mA CE(SAT) C B SMALL SIGNAL CHARACTERISTICS V = -5V, I = 20mA, CE E Gain Bandwidth Product 200 MHz f T f = 100MHz Output Capacitance C 7 pF V = -10V, I = 0, f = 1MHz ob CB E Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at IMT17 400 350 300 I = -10mA B 250 I = -8mA B 200 I = -6mA B 150 I = -4mA B 100 I = -2mA B 50 0 0 25 50 150 175 200 75 100 125 0 1 2 3 4 5 T , AMBIENT TEMPERATURE (C) -V , COLLECTOR EMITTER VOLTAGE (V) CE A Fig. 2 Typical Collector Current Fig. 1, Max Power Dissipation vs. vs. Collector-Emitter Voltage Ambient Temperature 1 V = -3V CE I /I = 10 CB T = 150C A T = 85C A 0.1 T = 25C A T = 150C A T = 85C A T = 25C T = -55C A A T = -55C A 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 1 -I , COLLECTOR CURRENT (A) C -I , COLLECTOR CURRENT (A) C Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1.2 I /I = 10 V = -3V CB CE 1 1 0.8 0.8 T = -55C A T = -55C A 0.6 T = 25C 0.6 A T = 25C A T = 85C A T = 85C A 0.4 0.4 T = 150C A T = 150C A 0.2 0.2 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 -I , COLLECTOR CURRENT (A) -I , COLLECTOR CURRENT (A) C C Fig. 6 Typical Base-Emitter Saturation Voltage Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current vs. Collector Current 2 of 5 June 2021 IMT17 Diodes Incorporated www.diodes.com Document number: DS31202 Rev. 5 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (mW) h , DC CURRENT GAIN D -V , BASE-EMITTER TURN-ON VOLTAGE (V) FE BE(ON) -V , COLLECTOR EMITTER CE(SAT) -V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) SATURATION VOLTAGE (V)