PART OBSOLETE CONTACT US IMX8 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-26 Complementary PNP Type Available (IMT4) Case Material: Molded Plastic,Gree Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020D Lead Free/RoHS Compliant (Note 3) Terminal Connections: See Diagram Gree Device (Notes 4 and 5) Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.016 grams (approximate) B B E 2 1 1 C E C 2 2 1 Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage V 120 V CEO Emitter-Base Voltage V 5.0 V EBO Collector Current - Continuous 50 mA I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) 300 mW P D Thermal Resistance, Junction to Ambient (Note 1) 417 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V 120 V I = 50A (BR)CBO C Collector-Emitter Breakdown Voltage V 120 V I = 1.0mA (BR)CEO C Emitter-Base Breakdown Voltage V 5.0 V I = 50A (BR)EBO E Collector Cutoff Current I 0.5 A V = 100V CBO CB Emitter Cutoff Current I 0.5 A V = 4.0V EBO EB ON CHARACTERISTICS (Note 2) DC Current Gain 180 820 hFE IC = 2.0mA, VCE = 6.0V Collector-Emitter Saturation Voltage 0.5 V V I = 10mA, I = 1.0mA CE(SAT) C B SMALL SIGNAL CHARACTERISTICS V = 12V, I = 2.0mA, CE C Current Gain-Bandwidth Product f 140 MHz T f = 100MHz Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at IMX8 6 I = 16A B 350 5 I = 14A B 300 I = 12A 4 B 250 I = 10A B 200 3 I = 8A B 150 2 I = 6A B 100 I = 4A B 1 R = 417C/W JA 50 0 0 0 25 50 150 175 200 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 75 100 125 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current vs. Fig. 1 Power Dissipation vs. Collector-Emitter Voltage Ambient Temperature (Note 1) 600 1.0 T = 75C A 500 T = 150C A 400 T = 25C A 300 0.100 T = 25C A T = -25C A 200 T = -50C A 100 0.010 0 1 10 100 1,000 1.0 10.0 100 I COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C, Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current 1,000 100 T = 25C A V = 5 Volts CE 100 10.0 T = 75C A T = -25C A 10 1.0 0.1 1 0 0.1 0.2 0.4 0.5 0.6 0.7 0.9 1 0.3 0.8 10 100 I , COLLECTOR CURRENT (mA) V , BASE-EMITTER VOLTAGE (V) BE(ON) C Fig. 6 Typical Collector Current vs. Fig. 5 Typical Gain-Bandwidth Product Base-Emitter Voltage vs. Collector Current 2 of 4 June 2021 IMX8 Diodes Incorporated www.diodes.com Document number: DS30304 Rev. 9 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (mW) h , DC CURRENT GAIN f , GAIN-BANDWIDTH PRODUCT (MHz) D FE T V , COLLECTOR-EMITTER CE(SAT) I , COLLECTOR CURRENT (mA) C SATURATION VOLTAGE (V) I , COLLECTOR CURRENT (mA) C