LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS General Description LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like 6 micro-controllers, comparators etc. particularly at a point of 5 load. It features a discrete PNP pass transistor with stable V which does not depend on the input voltage and can ce sat 4 support maximum continuous current of 150 mA up to 125 C (see fig. 1). It also contains a discrete NPN that can be used as a control. The component devices can be used 1 as a part of a circuit or as standalone discrete devices. 2 3 Features Epitaxial Planar Die Construction SOT-26 Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) CQ1 EQ2 CQ2 Gree Device (Note 2) 4 6 5 Mechanical Data Case: SOT-26 Case Material: Molded Plastic.Green Moldin Q1 Q2 Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL- STD -202, Method 208 1 23 Marking Information: See Page 6 BQ2 EQ1 BQ1 Ordering Information: See Page 6 Weight: 0.016 grams (approximate) Schematic and Pin Configuration Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Output Current 150 mA I out Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 3) P 300 mW D Power Derating Factor above 120 C P 2.33 mW/C der Thermal Resistance, Junction to Ambient Air (Note 3) 417 C/W R JA (Equivalent to one heated junction of PNP transistor) Junction Operation and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2 . Diodes Inc. sGree policy can be found on our website at Maximum Ratings: Discrete PNP Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage V -6 V EBO Output Current - continuous (Note 4) I -200 mA C Maximum Ratings: Discrete NPN Transistor (Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6 V EBO Output Current - continuous (Note 4) 200 mA I C Electrical Characteristics: Discrete PNP Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -40 V I = -10uA, I = 0 CBO C E Collector-Emitter Breakdown Voltage V -40 V I = -1.0mA, I = 0 CEO C B Emitter-Base Breakdown Voltage V -6 V I = -10A, I = 0 EBO E C Collector Cutoff Current I -50 nA V = -30V, V = -3.0V CEX CE EB(OFF) Base Cutoff Current -50 nA = -30V, V = -3.0V I V BL CE EB(OFF) Collector-Base Cut Off Current -50 nA I V = -30V, I = 0 CBO CB E Collector-Emitter Cut Off Current -50 nA I V = -30V, I = 0 CEO CE B Emitter-Base Cut Off Current -50 nA I V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 105 V = -1V, I = -100 A CE C 110 V = -1V, I = -1 mA CE C 120 V = -1V, I = -10 mA CE C DC Current Gain h FE 90 V = -1V, I = -50 mA CE C 32 V = -1V, I = -100 mA CE C 10 V = -1V, I = -200 mA CE C -0.08 I = - 10 mA, I = -1 mA C B Collector-Emitter Saturation Voltage V -0.15 V CE(SAT) I = -50mA, I = -5mA C B -0.5 I = -200mA, I = -20mA C B Equivalent on-resistance 2.5 R I = -200mA, I = -20mA CE(SAT) C B Base-Emitter Turn-on Voltage -0.92 V V V = -5V, I = -200mA BE(ON) CE C -0.95 I = -10mA, I = -1mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.1 I = -50mA, I = -5mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4 pF V = -5.0 V, f = 1.0 MHz, I = 0 OBO CB E Input Capacitance C 8 pF V = -5.0 V, f = 1.0 MHz, I = 0 IBO EB C Input Impedance h 2 12 K IE Voltage Feedback ratio h 0.1 10 x 10E-4 RE V = 1.0V, Ic = 10mA, f = 1.0 KHz CE Small Signal Current Gain h 100 400 FE Output Admittance 3 60 S h OE Current Gain-Bandwidth Product 250 MHz f V = - 20V, I = -10mA, f = 100 MHz T CE C V = - 5V, Ic = -100 uA, R = 1, CE s Noise Figure NF 4 dB f =1 KHz SWITCHING CHARACTERISTICS Delay Time t 35 ns V = -3.0 V, I = -10 mA, d CC C Rise Time t 35 ns V = 0.5V, I = -1.0 mA r BE(OFF) B1 Storage Time t 225 ns V = -3.0 V, I = -10 mA, s CC C Fall Time t 75 ns I = I = -1.0 mA f B1 B2 Notes: 4. Short duration pulse test used to minimize self-heating effect. DS30749 Rev. 4 - 2 2 of 7 LBN150B01 Diodes Incorporated www.diodes.com NEW PRODUCT