X-On Electronics has gained recognition as a prominent supplier of MJD31C-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD31C-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD31C-13 Diodes Incorporated

Hot MJD31C-13 electronic component of Diodes Incorporated
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Part No.MJD31C-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 100V 5A NPN SMT
Datasheet: MJD31C-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2328 ea
Line Total: USD 1.16

Availability - 7098
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
428
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 456
Multiples : 1
456 : USD 0.1425

7098
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 5
Multiples : 5
5 : USD 0.2328
50 : USD 0.1849
150 : USD 0.1644
500 : USD 0.1389
2500 : USD 0.1276
5000 : USD 0.1207

8066
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.506
10 : USD 0.4335
100 : USD 0.2564
500 : USD 0.2254
1000 : USD 0.222

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the MJD31C-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD31C-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BV > 100V Case: TO252 (DPAK) CEO I = 3A high Continuous Collector Current Case Material: Molded Plastic,Gree Molding Compound C I = 5A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Ideal for Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020 Complementary PNP Type: MJD32C Terminals: Finish Matte Tin Plated Leads, Solderable per Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.34 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability TO252 (DPAK) C B E Top View Pin Out Configuration Device Schematic Top View Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MJD31C-13 AEC-Q101 MJD31C 13 16 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MJD31C Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 100 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 3 A C Peak Pulse Collector Current I 5 A CM Continuous Base Current 1 A I B Power Dissipation 15 W P D Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit (Note 5) 3.9 Power Dissipation (Note 6) 2.1 W P D (Note 7) 1.6 (Note 5) 32 Thermal Resistance, Junction to Ambient Air (Note 6) R 59 JA C/W (Note 7) 80 Thermal Resistance, Junction to Leads (Note 8) 8.4 R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except mounted on 25mm x 25mm 1oz copper. 7. Same as note (5), except mounted on minimum recommended pad (MRP) layout. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 MJD31C June 2016 Diodes Incorporated www.diodes.com Document number: DS31625 Rev. 7 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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