NOT RECOMMENDED FOR NEW DESIGN USE MJD32CUQ MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data Case: TO252 (DPAK) This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic,Gree Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 BV > -100V CEO I = -3A high Continuous Collector Current Weight: 0.34 grams (Approximate) C I = -5A Peak Pulse Current CM Ideal for Power Switching or Amplification Applications Complementary NPN Type: MJD31CQ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) TO252 (DPAK) C B E Top View Pin Out Configuration Device Schematic Top View Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MJD32CQ-13 Automotive MJD32C 13 16 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MJD32CQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -100 V CBO Collector-Emitter Voltage -100 V V CEO Emitter-Base Voltage -6 V V EBO Continuous Collector Current -3 A I C Peak Pulse Collector Current -5 A I CM Continuous Base Current -1 A I B Power Dissipation P 15 W D Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 3.9 Power Dissipation (Note 7) 2.1 W P D (Note 8) 1.6 (Note 6) 32 Thermal Resistance, Junction to Ambient Air (Note 7) 59 RJA C/W (Note 8) 80 Thermal Resistance, Junction to Leads (Note 9) 8.4 R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except mounted on 25mm x 25mm 1oz copper. 8. Same as note (6), except mounted on minimum recommended pad (MRP) layout. 9. Thermal resistance from junction to solder-point (on the exposed collector pad). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 MJD32CQ November 2016 Diodes Incorporated www.diodes.com Document number: DS37050 Rev. 3 - 3