MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-23 Ideal for Medium Power Amplification and Switching C Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 B CGree Device (Notes 2 and 4) B 1.20 1.40 TOP VIEW B E D C 2.30 2.50 E G D 0.89 1.03 Mechanical Data H E 0.45 0.60 Case: SOT-23 K M G 1.78 2.05 Case Material: Molded Plastic. UL Flammability J L Classification Rating 94V-0 H 2.80 3.00 Moisture Sensitivity: Level 1 per J-STD-020D J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 C K 0.903 1.10 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). L 0.45 0.61 Terminal Connections: See Diagram M 0.085 0.180 Marking Information: See Page 3 0 8 Ordering Information: See Page 3 B E All Dimensions in mm Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 45 V CBO Collector-Emitter Voltage 18 V V CEO Emitter-Base Voltage 5 V V EBO Collector Current - Continuous I 1 A C Power Dissipation (Note 1) P 300 mW D Thermal Resistance, Junction to Ambient (Note 1) 417 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage V 45 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 18 V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current I 1 A V = 40V, I = 0 CBO CB E Emitter Cutoff Current I 1 A V = 4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 3) DC Current Gain h 150 800 I = 100mA, V = 1V FE C CE Collector-Emitter Saturation Voltage 0.5 V V I = 300mA, I = 30mA CE(SAT) C B SMALL SIGNAL CHARACTERISTICS Output Capacitance 8 pF C V = 10V, f = 1.0MHz, I = 0 obo CB E V = 10V, I = 50mA, CB E Current Gain-Bandwidth Product f 100 MHz T f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 400 1000 Note 1 350 300 250 200 100 150 100 50 V = 1.0V CE 0 1 0 175 200 25 50 75 100 125 150 0.001 0.1 1 0.0001 0.01 10 I , COLLECTOR CURRENT (A) T , AMBIENT TEMPERATURE (C) C A Fig. 2, Typical DC Current Gain vs Fig. 1, Max Power Dissipation vs Collector Current Ambient Temperature 100 1000 f = 1MHz 100 10 10 1 1 1 0.1 10 100 10 0.0001 0.001 0.01 0.1 1 V , COLLECTOR-BASE VOLTAGE (V) I , COLLECTOR CURRENT (A) CB C Fig. 3, Output Capacitance vs. Fig. 4, Collector Saturation Voltage vs Collector-Base Voltage Collector Current MMBT123S DS30292 Rev. 7 - 2 2 of 3 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D C , OUTPUT CAPACITANCE (pF) OBO V, COLLECTOR-EMITTER CE (SAT) h, DC CURRENT GAIN FE SATURATION VOLTAGE (mV)