X-On Electronics has gained recognition as a prominent supplier of MMBT2222ALP4-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2222ALP4-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT2222ALP4-7B Diodes Incorporated

MMBT2222ALP4-7B electronic component of Diodes Incorporated
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Part No.MMBT2222ALP4-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT General Purpose Tran X2-DFN1006-3 T&R 10K
Datasheet: MMBT2222ALP4-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.198 ea
Line Total: USD 0.2 
Availability - 41045
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
41045
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.198
10 : USD 0.1309
100 : USD 0.0671
1000 : USD 0.0473
2500 : USD 0.0429
10000 : USD 0.0374

776000
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0385

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the MMBT2222ALP4-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2222ALP4-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT2222ALP4 40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Case: X2-DFN1006-3 Low Collector-Emitter Saturation Voltage, V CE(sat) Case Material: Molded Plastic,Gree Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0009 grams (Approximate) X2-DFN1006-3 C B B C E E Top View Bottom View Device Symbol Device Schematic Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT2222ALP4-7B 2S 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT2222ALP4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 75 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage 6 V V EBO Collector Current - Continuous 600 mA I C Peak Collector Current 800 mA I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 460 mW D Power Dissipation (Note 6) P 1 W D Thermal Resistance, Junction to Ambient (Note 5) 272 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) 120 C/W R JA Thermal Resistance, Junction to Lead (Note 7) R 110 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 August 2012 MMBT2222ALP4 Diodes Incorporated www.diodes.com Document number: DS35506 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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