X-On Electronics has gained recognition as a prominent supplier of MMBT3904LP-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3904LP-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3904LP-7 Diodes Incorporated

MMBT3904LP-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMBT3904LP-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO
Datasheet: MMBT3904LP-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 33562
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
203
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 210
Multiples : 1
210 : USD 0.0767

33562
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.2035
100 : USD 0.0957
1000 : USD 0.0748
3000 : USD 0.0649

2473
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.336
10 : USD 0.2226
25 : USD 0.2044
50 : USD 0.1708
100 : USD 0.105

203
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 210
Multiples : 1
210 : USD 0.0767

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT3904LP-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3904LP-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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1N 1N 1N MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BV > 40V CEO Case Material: Molded Plastic, Green Molding Compound. I = 200mA High Collector Current C UL Flammability Classification Rating 94V-0 P = 1000mW Power Dissipation D Moisture Sensitivity: Level 1 per J-STD-020 2 0.60mm Package Footprint, 13 times Smaller than SOT23 Terminals: Finish NiPdAu. 0.5mm Height Package Minimizing Off-Board Profile Solderable per MIL-STD-202, Method 208 e4 Complementary PNP Type MMBT3906LP Weight: 0.0008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C X1-DFN1006-3 B B C E E Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT3904LP-7 1N 7 8mm 3,000 MMBT3904LP-7B 1N 7 8mm 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT3904LP Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 60 V VCBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current 200 mA I C Peak Collector Current 200 mA I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 400 Power Dissipation P mW D (Note 6) 1000 (Note 5) 310 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 120 Thermal Resistance, Junction to Lead (Note 7) R 120 C/W JL Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 MMBT3904LP May 2015 Diodes Incorporated www.diodes.com Document number: DS31835 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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