MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
A SOT-23
Complementary NPN Type Available (MMBT4124)
C
Dim Min Max
Ideal for Low Power Amplification and Switching
A 0.37 0.51
B C
Lead, Halogen and Antimony Free, RoHS Compliant
B 1.20 1.40 Gree Device (Notes 2 and 4)
B TOP VIEW E
C 2.30 2.50
D
E
Mechanical Data
G
D 0.89 1.03
H
Case: SOT-23
E 0.45 0.60
Case Material: Molded Plastic. UL Flammability
K
M G 1.78 2.05
Classification Rating 94V-0
J
H 2.80 3.00
Moisture Sensitivity: Level 1 per J-STD-020C L
Terminal Connections: See Diagram
J 0.013 0.10
C
Terminals: Solderable per MIL-STD-202, Method 208
K 0.903 1.10
Lead Free Plating (Matte Tin Finish annealed over Alloy
L 0.45 0.61
42 leadframe).
M 0.085 0.180
Marking (See Page 3): K2B
Ordering & Date Code Information: See Page 3 B E
0 8
Weight: 0.008 grams (approximate)
All Dimensions in mm
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V -25 V
CBO
Collector-Emitter Voltage V -25 V
CEO
Emitter-Base Voltage V -4.0 V
EBO
Collector Current - Continuous (Note 1) -200 mA
I
C
Power Dissipation (Note 1) 300 mW
P
D
Thermal Resistance, Junction to Ambient (Note 1) 417
R C/W
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V -25 V I = -10A, I = 0
(BR)CBO C E
Collector-Emitter Breakdown Voltage V -25 V I = -1.0mA, I = 0
(BR)CEO C B
Emitter-Base Breakdown Voltage -4.0 V
V I = -10A, I = 0
(BR)EBO E C
Collector Cutoff Current -50 nA
I V = -20V, I = 0V
CBO CB E
Emitter Cutoff Current I -50 nA V = -3.0V, I = 0V
EBO EB C
ON CHARACTERISTICS (Note 3)
120 360 I = -2.0mA, V = -1.0V
C CE
DC Current Gain h
FE
60
I = -50mA, V = -1.0V
C CE
Collector-Emitter Saturation Voltage V -0.40 V I = -50mA, I = -5.0mA
CE(SAT) C B
Base-Emitter Saturation Voltage V -0.95 V I = -50mA, I = -5.0mA
BE(SAT) C B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance 4.5 pF
C V = -5.0V, f = 1.0MHz, I = 0
obo CB E
Input Capacitance C 10 pF V = -0.5V, f = 1.0MHz, I = 0
ibo EB C
V = 1.0V, I = -2.0mA,
CE C
Small Signal Current Gain h 120 480
fe
f = 1.0kHz
V = -20V, I = -10mA,
CE C
Current Gain-Bandwidth Product f 250 MHz
T
f = 100MHz
V = -5.0V, I = -100A,
CE C
Noise Figure NF 4.0 dB
R = 1.0k, f = 1.0kHz
S
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at
100
350
300
250
200
10
150
100
50
0
1
0 25 50 100 125 150 175 200
75 0.1 1
10 100
T , AMBIENT TEMPERATURE (C)
V , COLLECTOR-BASE VOLTAGE (V)
A CB
Fig. 2, Input and Output Capacitance vs.
Fig. 1, Max Power Dissipation vs.
Ambient Temperature Collector-Base Voltage
10
1,000
1
100
0.1
10
1
0.01
1 1,000
0.1 10 10
100 1 100 1,000
I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA)
C C
Fig. 3, Typical DC Current Gain vs. Fig. 4, Typical Collector-Emitter Saturation Voltage
Collector Current vs. Collector Current
1.0
0.9
0.8
0.7
0.6
I
C
= 10
I
B
0.5
110 100
I , COLLECTOR CURRENT (mA)
C
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30106 Rev. 8 - 2 2 of 3 MMBT4126
Diodes Incorporated
www.diodes.com
V , BASE-EMITTER (V)
BE(SAT) h, DC CURRENT GAIN
P , POWER DISSIPATION (mW)
FE
D
SATURATION VOLTAGE
V, COLLECTOR-EMITTER (V)
C , INPUT CAPACITANCE (pF)
CE(SAT)
IBO
SATURATION VOLTAGE
C , OUTPUT CAPACITANCE (pF)
OBO