MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) Gree Device (Note 3 and 4) A 0.15 0.30 0.22 B C TOP VIEW B 0.75 0.85 0.80 B E Mechanical Data C 1.45 1.75 1.60 G Case: SOT-523 D 0.50 H Case Material: Molded Plastic. UL Flammability G 0.90 1.10 1.00 Classification Rating 94V-0 K N Moisture Sensitivity: Level 1 per J-STD-020C M H 1.50 1.70 1.60 Terminals: Solderable per MIL-STD-202, Method 208 J 0.00 0.10 0.05 Lead Free Plating (Matte Tin Finish annealed over J D L Alloy 42 leadframe). K 0.60 0.80 0.75 Terminal Connections: See Diagram C L 0.10 0.30 0.22 Marking Information: 2X, See Page 4 Ordering & Date Code Information: See Page 4 M 0.10 0.20 0.12 Weight: 0.002 grams (approximate) N 0.45 0.65 0.50 0 8 B E All Dimensions in mm Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 60 V V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current Continuous (Note 1) I 600 mA C Power Dissipation (Note 1) P 150 mW d Thermal Resistance, Junction to Ambient (Note 1) 833 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage 60 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 40 V V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6.0 V V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current I 100 nA V = 35V, V = 0.4V CEX CE EB(OFF) Base Cutoff Current I 100 nA V = 35V, V = 0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = 100A, V = 1.0V C CE 20 I = 1.0mA, V = 1.0V 40 C CE DC Current Gain 80 h I = 10mA, V = 1.0V FE C CE 100 300 I = 150mA, V = 1.0V C CE 40 I = 500mA, V = 2.0V C CE 0.40 I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.75 I = 500mA, I = 50mA C B 0.75 0.95 I = 150mA, I = 15mA C B Base-Emitter Saturation Voltage V V BE(SAT) 1.2 I = 500mA, I = 50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 6.5 pF V = 5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 30 pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C Input Impedance 1.0 15 h k ie -4 Voltage Feedback Ratio 0.1 8.0 x 10 h re V = 10V, I = 1.0mA, CE C f = 1.0kHz Small Signal Current Gain 40 500 h fe Output Admittance h 1.0 30 S oe V = 10V, I = 20mA, CE C Current Gain-Bandwidth Product 250 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 15 ns d V = 30V, I = 150mA, CC C V = 2.0V, I = 15mA Rise Time 20 ns BE(off) B1 t r Storage Time 225 ns t s V = 30V, I = 150mA, CC C I = I = 15mA Fall Time 30 ns B1 B2 t f Notes: 5. Short duration pulse test used to minimize self-heating effect. 1,000 250 T = 125C 200 A 100 150 T = 25C A T = -25C A 100 10 50 V = 1.0V CE 1 0 1 1,000 0140 80 12060200 0.1 10 100 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1 Power Derating Curve Fig. 2 Typical DC Current Gain vs. Collector Current MMBT4401T DS30272 Rev. 8 - 2 2 of 4 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) d h, DC CURRENT GAIN FE